Browsing by author "Werquin, M."

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First results of AlGaN/GaN HEMTs on sapphire substrate using an argon-ion implant-isolation technology

Werquin, M.; Vellas, N.; Guhel, Y.; Ducatteau, D.; Boudart, B.; Pesant, J.C.; Bougrioua, Z.; Germain, Marianne; de Jaeger, J.C.; Gaquiere, C. (2005)
High power performances of AlGaN/GaN HEMTs on Sapphire Substrate at Ft=4GHz

Vellas, N.; Gaquire, C.; Guhel, Y.; Werquin, M.; Ducatteau, D.; Boudart, B.; de Jaeger, J.C.; Bougrioua, Z.; Germain, Marianne; Leys, Maarten; Moerman, Ingrid; Borghs, Gustaaf (2002)
Microwave performances on gallium nitride based HEMT devices

Gaquiere, C.; Vellas, N.; Werquin, M.; Ducatteau, D.; Delos, E.; Chartier, E.; Lancereau, D.; Gerard, H.; Di Forte-Poisson, M.A.; Cordier, Y.; Germain, Marianne; Morvan, E.; Grimbert, B.; Caillas, N.; Hoel, V.; Theron, D.; Aubry, R.; Jacquet, J.C.; de Jaeger, J.C.; Delage, S.L. (2004)