Browsing by author "Kobayashi, Masaharu"
Now showing items 1-4 of 4
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High hole mobility in 65 nm strained Ge p-channel field effect transistors with HfO2 gate dielectric
Mitard, Jerome; De Jaeger, Brice; Eneman, Geert; Dobbie, Andrew; Myronov, M.; Kobayashi, Masaharu; Geypen, Jef; Bender, Hugo; Vincent, Benjamin; Krom, Raymond; Franco, Jacopo; Winderickx, Gillis; Vrancken, Evi; Vanherle, Wendy; Wang, Wei-E; Tseng, Joshua; Loo, Roger; De Meyer, Kristin; Caymax, Matty; Pantisano, Luigi; Leadley, D.R; Meuris, Marc; Absil, Philippe; Biesemans, Serge; Hoffmann, Thomas Y. (2011) -
High hole-mobility 65nm biaxially-strained Ge-pFETs: fabrication, analysis and optimization
Mitard, Jerome; De Jaeger, Brice; Eneman, Geert; Dobbie, Andrew; Myronov, M.; Kobayashi, Masaharu; Geypen, Jef; Bender, Hugo; Vincent, Benjamin; Krom, Raymond; Franco, Jacopo; Winderickx, Gillis; Vrancken, Evi; Vanherle, Wendy; Wang, Wei-E; Tseng, Joshua; Loo, Roger; De Meyer, Kristin; Caymax, Matty; Pantisano, Luigi; Leadley, David; Meuris, Marc; Absil, Philippe; Biesemans, Serge; Hoffmann, Thomas Y. (2010) -
On the high-field transport and uniaxial stress effect in Ge PFETs
Kobayashi, Masaharu; Mitard, Jerome; Irisawa, Toshifumi; Hoffmann, Thomas Y.; Meuris, Marc; Saraswat, Krishna; Nishi, Yoshio; Heyns, Marc (2011) -
Si1-xGex-channel PFETs: scalability, layout considerations and compatibility with other stress techniques
Eneman, Geert; Hellings, Geert; Mitard, Jerome; Witters, Liesbeth; Yamaguchi, Shinpei; Garcia Bardon, Marie; Christie, Phillip; Ortolland, Claude; Hikavyy, Andriy; Favia, Paola; Bargallo Gonzalez, Mireia; Simoen, Eddy; Crupi, Felice; Kobayashi, Masaharu; Franco, Jacopo; Takeoka, Shinji; Krom, Raymond; Bender, Hugo; Loo, Roger; Claeys, Cor; De Meyer, Kristin; Hoffmann, Thomas Y. (2011)