Browsing by author "Leadley, David"

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An Origin behind Rashba spin splitting within inverted doped sGe heterostructures

Hassan, Amna; Morris, Richard; Mironov, Oleg; Gabani, Slavomir; Dobbie, Andy; Leadley, David (2017)
High hole-mobility 65nm biaxially-strained Ge-pFETs: fabrication, analysis and optimization

Mitard, Jerome; De Jaeger, Brice; Eneman, Geert; Dobbie, Andrew; Myronov, M.; Kobayashi, Masaharu; Geypen, Jef; Bender, Hugo; Vincent, Benjamin; Krom, Raymond; Franco, Jacopo; Winderickx, Gillis; Vrancken, Evi; Vanherle, Wendy; Wang, Wei-E; Tseng, Joshua; Loo, Roger; De Meyer, Kristin; Caymax, Matty; Pantisano, Luigi; Leadley, David; Meuris, Marc; Absil, Philippe; Biesemans, Serge; Hoffmann, Thomas Y. (2010)
Low temperature mobility in hafnium-oxide gated germanium p-channel metal-oxide-semiconductor field-effect transistors

Beer, Chris; Whall, Terry; Parker, Evan; Leadley, David; De Jaeger, Brice; Nicholas, Gareth; Zimmerman, Paul; Meuris, Marc; Szostak, Slawomir; Gluszko, Grzegorz; Lukasiak, Lidia (2007)