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    • Microwave performances on gallium nitride based HEMT devices 

      Gaquiere, C.; Vellas, N.; Werquin, M.; Ducatteau, D.; Delos, E.; Chartier, E.; Lancereau, D.; Gerard, H.; Di Forte-Poisson, M.A.; Cordier, Y.; Germain, Marianne; Morvan, E.; Grimbert, B.; Caillas, N.; Hoel, V.; Theron, D.; Aubry, R.; Jacquet, J.C.; de Jaeger, J.C.; Delage, S.L. (2004)
    • The 2018 GaN power electronics roadmap 

      Amano, H.; Baynes, Y.; Beam, E.; Borga, Matteo; Bouchet, T.; Chalker, Paul R.; Charles, M.; Chen, Kevin J.; Chowdhury, Nadim; Chu, Rongming; De Santi, Carlo; De Souza, Maria Merlyne; Decoutere, Stefaan; Di Cioccio, L.; Eckhardt, Bernd; Egawa, Takashi; Fay, P.; Freedsman, Joseph J.; Guido, L.; Haberlen, Oliver; Haynes, Geoff; Heckel, Thomas; Hemakumara, Dilini; Houston, Peter; Hu, Jie; Hua, Mengyuan; Huang, Qingyun; Huang, Alex; Jiang, Sheng; Kawai, H.; Kinzer, Dan; Kuball, Martin; Kumar, Ashwani; Lee, Kean Boon; Li, Xu; Marcon, Denis; März, Martin; McCarthy, R.; Meneghesso, Gaudenzio; Meneghini, Matteo; Morvan, E.; Nakajima, A.; Narayanan, E.M.S.; Oliver, Stephen; Palacios, Tomas; Piedra, Daniel; Plissonnier, M.; Reddy, R.; Sun, Min; Thayne, Iain; Torres, A.; Trivellin, Nicola; Unni, V.; Uren, Michael J.; Van Hove, Marleen; Wallis, David J.; Wang, J.; Xie, J.; Yagi, S.; Yang, Shu; Youtsey, C.; Yu, Ruiyang; Zanoni, Enrico; Zeltner, Stefan; Zhang, Yuhao (2018)