Browsing by author "Lo, G.Q."
Now showing items 1-4 of 4
-
Practical solutions to enhance EWF tunability of Ni FUSI gate electrode on HfO2
Wang, X.P.; Yang, J.J.; Chen, J.D.; Xie, R.L.; Li, M.-F.; Zhu, C.X.; Yu, HongYu; Du, A.Y.; Lim, P.C.; Lim, Andy; Mi, Y.Y.; Lai, Doreen M.Y.; Loh, W.Y.; Biesemans, Serge; Lo, G.Q.; Kwong, D.-L. (2007) -
Wide Vfb and Vth tunability for metal-gated MOS devices with HfLaO gate dielectrics
Wang, X.P.; Yu, HongYu; Li, M.F; Zhu, C.X.; Biesemans, Serge; Chin, A.; Sun, Y.; Feng, Y.; Lim, A.; Yeo, Y.C.; Loh, W.Y.; Lo, G.Q.; Kwong, D.L (2007-04) -
Widely tunable work function TaN/Ru stacking layer on HfLaO gate dielectric
Wang, X.P.; Li, M.F.; Yu, HongYu; Yang, J.J.; Chen, J.D.; Zhu, C.X.; Du, A.Y.; Loh, W.Y.; Biesemans, Serge; Chin, A.; Lo, G.Q.; Kwong, D.L. (2008) -
Work function tunability of refractory metal nitrides by lanthanum or aluminum doping for advanced CMOS devices
Wang, X.P.; Lim, A.E.J.; Yu, HongYu; Li, M.F.; Ren, C.; Loh, W.Y.; Zhu, C.X; Chin, A.; Trigg, A.D.; Yeo, Y.C.; Biesemans, Serge; Lo, G.Q.; Kwong, D.L. (2007)