Browsing by author "Das, Jo"
Now showing items 1-20 of 70
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2kV breakdown voltage GaN-on-Si DHFETs with sub-micron thick AlGaN Buffer
Srivastava, Puneet; Cheng, Kai; Das, Jo; Van Hove, Marleen; Leys, Maarten; Marcon, Denis; Visalli, Domenica; Geens, Karen; Decoutere, Stefaan; Mertens, Robert; Borghs, Gustaaf (2012) -
A 96% efficient high-frequency DC–DC converter using E-mode GaN DHFETs on Si
Das, Jo; Everts, Jordi; Van den Keybus, Jeroen; Van Hove, Marleen; Visalli, Domenica; Srivastava, Puneet; Marcon, Denis; Cheng, Kai; Leys, Maarten; Decoutere, Stefaan; Driesen, Johan; Borghs, Gustaaf (2011) -
A comprehensive reliability investigation of the voltage-, temperature- and device geometry-dependence of the gate degradation on state-of-the-art GaN-on-Si HEMTs
Marcon, Denis; Kauerauf, Thomas; Medjdoub, Farid; Das, Jo; Van Hove, Marleen; Srivastava, Puneet; Cheng, Kai; Leys, Maarten; Mertens, Robert; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico; Borghs, Gustaaf (2010-12) -
A hard switching VIENNA boost converter for characterization of AlGaN/GaN/AlGaN power DHFETs
Everts, Jordi; Jacqmaert, Pieter; Gelagaev, Ratmir; Das, Jo; Germain, Marianne; Van den Keybus, Jeroen; Driesen, Johan (2010) -
A high-efficiency, high-frequency boost converter using enhancement mode GaN DHFETs on silicon
Everts, Jordi; Das, Jo; Van Den Keybus, Jeroen; Genoe, Jan; Germain, Marianne; Driesen, Johan (2010) -
A load-pull wafer-mapper
Vanaverbeke, Fre; Vaesen, Kristof; Xiao, Dongping; Pauwels, Luc; De Raedt, Walter; Germain, Marianne; Degroote, Stefan; Das, Jo; Derluyn, Joff; Schreurs, Dominique (2008) -
A very compact power amplifier using GaN HEMTs in multi-layer thin-film technology
Liu, Rui; Schreurs, Dominique; De Raedt, Walter; Vanaverbeke, Fre; Das, Jo; Germain, Marianne; Mertens, Robert (2010) -
AlGaN-on-Si backside illuminated photodetectors for the extreme ultraviolet (EUV) range
Malinowski, Pawel; Duboz, Jean-Yves; John, Joachim; Sturdevant, Charles; Das, Jo; Derluyn, Joff; Germain, Marianne; De Moor, Piet; Minoglou, Kiki; Semond, Fabrice; Frayssinet, Eric; Hochedez, Jean-Francois; Giordanengo, Boris; Van Hoof, Chris; Mertens, Robert (2010) -
AlGaN/GaN HEMTs on Si substrates: Can they overcome the thermal limit?
Das, Jo; Oprins, Herman; Derluyn, Joff; Germain, Marianne; Borghs, Gustaaf (2007-05) -
AlGaN/GaN HEMTs with backside Schottky contact
Russo, S.; Di Carlo, A.; Das, Jo; Germain, Marianne; Borghs, Gustaaf (2007) -
AlGaN/GaN/AlGaN double heterostructure FETs for power electronics applications
Srivastava, Puneet; Das, Jo; Visalli, Domenica; Van Hove, Marleen; Derluyn, Joff; Malinowski, Pawel; Kang, Xuanwu; Cheng, Kai; Degroote, Stefan; Leys, Maarten; Borghs, Gustaaf; Mertens, Robert; Germain, Marianne (2010) -
Alternative approaches to nonvolatile magnetic memory: aspects of integrated magnetic structures
De Boeck, Jo; Bruynseraede, Christophe; Boeve, Hans; Dessein, Kristof; Dutta, Barundeb; Attenborough, Karen; Peumans, Peter; Das, Jo; Borghs, Gustaaf (1998) -
Backside-illuminated GaN-on-Si Schottky photodiodes for UV radiation detection
Malinowski, Pawel; John, Joachim; Duboz, Jean-Yves; Hellings, Geert; Lorenz, Anne; Rodriguez Madrid, Juan; Sturdevant, Charles; Cheng, Kai; Leys, Maarten; Derluyn, Joff; Das, Jo; Germain, Marianne; Minoglou, Kiki; De Moor, Piet; Frayssinet, Eric; Semond, Fabrice; Hochedez, Jean-Francois; Giordanengo, Boris; Mertens, Robert (2009-12) -
Bit-selective read and write with coincident current scheme in spin-valve/diode MRAM cells
Boeve, Hans; Das, Jo; Bruynseraede, Christophe; De Boeck, Jo; Borghs, Gustaaf (1998) -
Conductance creep and breakdown of stressed ferromagnetic tunneljunctions
Das, Jo; De Boeck, Jo; Lagae, Liesbet; Borghs, Gustaaf (2001) -
Contactless electroreflectance evidence for reduction in the surface potential barrier in AlGaN/GaN heterostructures passivated by SiN layer
Kudrawiec, Robert; Paszkiewicz, B.; Motyka, M.; Misciewic, Jan; Derluyn, Joff; Lorenz, Anne; Cheng, Kai; Das, Jo; Germain, Marianne (2008-11) -
Development and Integration of a high efficiency baseline leading to 23% IBC cells
Aleman, Monica; Das, Jo; Janssens, Tom; Pawlak, Bartek; Posthuma, Niels; Robbelein, Jo; Singh, Sukhvinder; Baert, Kris; Poortmans, Jef; Fernandez, Jara; Yoshikawa, Kunta; Verlinden, P.J. (2012) -
Electrical characterization and reliability study of integrated GaN power amplifier in multi-layer thin-film technology
Liu, Rui; Schreurs, Dominique; De Raedt, Walter; Vanaverbeke, Fre; Das, Jo; Mertens, Robert; De Wolf, Ingrid (2011) -
Excellent stability of GaN-on-Si HEMTs with 5 μm gate-drain spacing tested in off-state at a record drain voltage of 200V and 200°C
Marcon, Denis; Van Hove, Marleen; Visalli, Domenica; Derluyn, Joff; Das, Jo; Medjdoub, Farid; Degroote, Stefan; Leys, Maarten; Cheng, Kai; Mertens, Robert; Germain, Marianne; Borghs, Gustaaf (2009) -
Excellent stability of GaN-on-Si high electron mobility transistors with 5 μm gate/drain spacing tested in off-state at a record drain voltage of 200 V and 200 °C
Marcon, Denis; Van Hove, Marleen; Visalli, Domenica; Derluyn, Joff; Das, Jo; Medjdoub, Farid; Degroote, Stefan; Leys, Maarten; Cheng, Kai; Mertens, Robert; Germain, Marianne; Borghs, Gustaaf (2010)