Toggle navigation
My submissions
Login
Toggle navigation
View item
imec Publications Repository
imec Publications
Conference contributions
View item
imec Publications Repository
imec Publications
Conference contributions
View item
JavaScript is disabled for your browser. Some features of this site may not work without it.
Excellent stability of GaN-on-Si HEMTs with 5 μm gate-drain spacing tested in off-state at a record drain voltage of 200V and 200°C
Metadata
Show full item record
Authors
Marcon, Denis
;
Van Hove, Marleen
;
Visalli, Domenica
;
Derluyn, Joff
;
Das, Jo
;
Medjdoub, Farid
;
Degroote, Stefan
;
Leys, Maarten
;
Cheng, Kai
;
Mertens, Robert
;
Germain, Marianne
;
Borghs, Gustaaf
Conference
International Conference on Solid-State Devices and Materials Conference - SSDM
Title
Excellent stability of GaN-on-Si HEMTs with 5 μm gate-drain spacing tested in off-state at a record drain voltage of 200V and 200°C
Publication type
Proceedings paper
Collections
Conference contributions
Search imec Publications Repository
This collection
Browse
All of imec Publications Repository
Collections
Publication date
Authors
Titles
Subjects
imec author
Availability
Publication type
This collection
Publication date
Authors
Titles
Subjects
imec author
Availability
Publication type
My account
login