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Excellent stability of GaN-on-Si HEMTs with 5 μm gate-drain spacing tested in off-state at a record drain voltage of 200V and 200°C
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1899 since deposited on 2021-10-18
Acq. date: 2025-10-23
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Views
1899 since deposited on 2021-10-18
Acq. date: 2025-10-23
Citations