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Excellent stability of GaN-on-Si HEMTs with 5 μm gate-drain spacing tested in off-state at a record drain voltage of 200V and 200°C

Date

2009
Proceedings Paper
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dc.contributor.authorMarcon, Denis
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorVisalli, Domenica
dc.contributor.authorDerluyn, Joff
dc.contributor.authorDas, Jo
dc.contributor.authorMedjdoub, Farid
dc.contributor.authorDegroote, Stefan
dc.contributor.authorLeys, Maarten
dc.contributor.authorCheng, Kai
dc.contributor.authorMertens, Robert
dc.contributor.authorGermain, Marianne
dc.contributor.authorBorghs, Gustaaf
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorMertens, Robert
dc.contributor.imecauthorBorghs, Gustaaf
dc.date.accessioned2021-10-18T00:35:42Z
dc.date.available2021-10-18T00:35:42Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15823
dc.source.beginpage816
dc.source.conferenceInternational Conference on Solid-State Devices and Materials Conference - SSDM
dc.source.conferencedate7/10/2009
dc.source.conferencelocationSendai Japan
dc.source.endpage817
dc.title

Excellent stability of GaN-on-Si HEMTs with 5 μm gate-drain spacing tested in off-state at a record drain voltage of 200V and 200°C

dc.typeProceedings paper
dspace.entity.typePublication
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