Browsing by author "Vandersmissen, Raf"
Now showing items 1-20 of 31
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A time- and frequency-domain characterization of a thin-film metamorphic HEMT under modulated backside illumination
Vandersmissen, Raf; Schreurs, Dominique; Vandenberghe, Servaas; Borghs, Gustaaf (2004) -
A time-domain RF characterisation of a thin-film metamorphic HEMT under modulated backside illumination
Vandersmissen, Raf; Schreurs, Dominique; Vandenberghe, Servaas; Borghs, Gustaaf (2002) -
Accelerated ageing tests on metamorphic HEMTs on germanium
Vandersmissen, Raf; Petersen, Rainer; Schreurs, Dominique; Mijlemans, P.; Borghs, Gustaaf (2001) -
Accurate microwave large-signal model for thinned metamorphic HEMTs on germanium, aimed for low-power non-linear MCM-D circuit applications
Schreurs, Dominique; Vandersmissen, Raf; Mijlemans, P.; Borghs, Gustaaf (2001) -
AlGaN/GaN HEMT : when MOVPE meets the device challenge
Germain, Marianne; Leys, Maarten; Boeykens, Steven; Cheng, Kai; Degroote, Stefan; Derluyn, Joff; Das, Johan; Vandersmissen, Raf; Wang, Wenfei; Xiao, Dongping; Borghs, Gustaaf (2005) -
ATHENA, Epi-GaN and beyond :MOVPE growth and processing of AlGaN/GaN HEMT
Germain, Marianne; Leys, Maarten; Degroote, Stefan; Cheng, Kai; Boeykens, Steven; Derluyn, Joff; Das, Johan; Ruythooren, Wouter; Vandersmissen, Raf; Schreurs, Dominique; Wang, Wenfei; Xiao, Dongping; Borghs, Gustaaf (2005) -
Correlation between the reliability of HEMT devices and that of a combined oscillator-amplifier MMIC
Schreurs, Dominique; De Raedt, Walter; Vandersmissen, Raf; Neuhaus, B.; Beyer, A.; Nauwelaers, Bart (2001) -
Development of extraction and optimization based large-signal models for thinned metamorphic high-electron mobility transistors on germanium
Schreurs, Dominique; van Niekerk, C.; Vandersmissen, Raf; Borghs, Gustaaf (2002) -
Embedded thin-film HEMTs in multi-chip modules
Vandersmissen, Raf; Schreurs, Dominique; Carchon, Geert; Borghs, Gustaaf (2003) -
Embedded thin-films HEMTs in multi-chip modules
Vandersmissen, Raf; Schreurs, Dominique; Carchon, Geert; Borghs, Gustaaf (2004) -
Feedback amplifier based on an embedded HEMT in thin-film multilayer technology
Vandersmissen, Raf; Schreurs, Dominique; Carchon, Geert; Borghs, Gustaaf (2003) -
GaN for RF power amplifier : challenges and opportunities from material to System-in-a-Package
Germain, Marianne; Das, Johan; Derluyn, Joff; Vandersmissen, Raf; De Raedt, Walter; Schreurs, Dominique; Ruythooren, Wouter; Xiao, Dongping; Borghs, Gustaaf (2005) -
Ge substrates, metamorphic HEMTs and hybrid integration
Vandersmissen, Raf (2001) -
Germanium devices: hybrid integration and substrate removal
Vandersmissen, Raf; van der Zanden, Koen; Schreurs, Dominique; Borghs, Gustaaf (2001) -
High performance GaN field-effect-transistors grown by MOVPE with in-situ Si3N4 surface passivation
Germain, Marianne; Derluyn, Joff; Xiao, Dongping; Vandersmissen, Raf; Das, Johan; Wang, Wenfei; Boeykens, Steven; Leys, Maarten; Degroote, Stefan; Ruythooren, Wouter; Borghs, Gustaaf (2004) -
High performant high-gain amplifiers based on metamorphic GaAs HEMTs
van der Zanden, Koen; Schreurs, Dominique; Vandersmissen, Raf; Borghs, Gustaaf (2000) -
Hybrid integration of multi-finger HEMTs: A comparison between flip-chip and substrate removal
Das, Johan; Ruythooren, Wouter; Vandersmissen, Raf; Oprins, Herman; Derluyn, Joff; Germain, Marianne; Borghs, Gustaaf (2005) -
Hybrid integration of thinned metamorphic HEMTs on Germanium
Vandersmissen, Raf; van der Zanden, Koen; Schreurs, Dominique; Borghs, Gustaaf (2000) -
Improvement of AlGaN/GaN high electron mobility transistor structures by in situ deposition of a Si3N4 layer
Derluyn, Joff; Boeykens, Steven; Cheng, Kai; Vandersmissen, Raf; Das, Johan; Ruythooren, Wouter; Degroote, Stefan; Leys, Maarten; Germain, Marianne; Borghs, Gustaaf (2005-09) -
Influence of silicon nitride passivation on DC and behaviour of InP HEMTs
Vandersmissen, Raf; Schreurs, Dominique; Borghs, Gustaaf (2002)