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High performance GaN field-effect-transistors grown by MOVPE with in-situ Si3N4 surface passivation
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High performance GaN field-effect-transistors grown by MOVPE with in-situ Si3N4 surface passivation
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Date
2004
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Germain, Marianne
;
Derluyn, Joff
;
Xiao, Dongping
;
Vandersmissen, Raf
;
Das, Johan
;
Wang, Wenfei
;
Boeykens, Steven
;
Leys, Maarten
;
Degroote, Stefan
;
Ruythooren, Wouter
;
Borghs, Gustaaf
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1932
since deposited on 2021-10-15
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last month
Acq. date: 2026-01-10
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Metrics
Views
1932
since deposited on 2021-10-15
1
last month
Acq. date: 2026-01-10
Citations