Skip to content
Institutional repository
Communities & Collections
Browse
Site
Log In
imec Publications
Presentations
High performance GaN field-effect-transistors grown by MOVPE with in-situ Si3N4 surface passivation
Publication:
High performance GaN field-effect-transistors grown by MOVPE with in-situ Si3N4 surface passivation
Date
2004
Presentation
Simple item page
Full metadata
Statistics
Loading...
Loading...
Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Germain, Marianne
;
Derluyn, Joff
;
Xiao, Dongping
;
Vandersmissen, Raf
;
Das, Johan
;
Wang, Wenfei
;
Boeykens, Steven
;
Leys, Maarten
;
Degroote, Stefan
;
Ruythooren, Wouter
;
Borghs, Gustaaf
Journal
Abstract
Description
Metrics
Views
1931
since deposited on 2021-10-15
Acq. date: 2025-10-23
Citations
Metrics
Views
1931
since deposited on 2021-10-15
Acq. date: 2025-10-23
Citations