Browsing by author "Yang, B."
Now showing items 1-4 of 4
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Beyond interface: the impact of oxide border traps on InGaAs and Ge n-MOSFETs
Lin, Dennis; Alian, AliReza; Gupta, S.; Yang, B.; Bury, Erik; Sioncke, Sonja; Degraeve, Robin; Toledano Luque, Maria; Krom, Raymond; Favia, Paola; Bender, Hugo; Caymax, Matty; Saraswat, K.C.; Collaert, Nadine; Thean, Aaron (2012) -
CAD for RF circuits
Wambacq, P.; Vandersteen, Gerd; Philips, J.; Roychowdhury, J.; Eberle, Wolfgang; Yang, B.; Long, D.; Demir, A. (2001) -
GeSn channel nMOSFETs: material potential and technological outlook
Gupta, Somya; Vincent, Benjamin; Lin, Dennis; Gunji, M.; Firrincieli, Andrea; Gencarelli, Federica; Magyari-Kope, B.; Yang, B.; Douhard, Bastien; Delmotte, Joris; Franquet, Alexis; Caymax, Matty; Dekoster, Johan; Nishi, Y.; Saraswat, K.C. (2012) -
Towards high mobility GeSn channel nMOSFETs: improved surface passivation using novel ozone oxidation method
Gupta, Somya; Vincent, Benjamin; Yang, B.; Lin, Dennis; Gencarelli, Federica; Lin, J.-Y. J.; Chen, R.; Richard, Olivier; Bender, Hugo; Magyari-Koepe, B.; Caymax, Matty; Dekoster, Johan; Nishi, Y.; Saraswat, K. C. (2012)