Browsing by author "Akatsu, T."

Now showing items 1-2 of 2

    • 200 mm Germanium-on-insulator(GeOI) by smart cut technology and recent GeOI MOSFETs achievements 

      Akatsu, T.; Deguet, C.; Sanchez, L.; Richtarch, C.; Allibert, F.; Letertre, F.; Mazure, C.; Kernevez, N.; Clavelier, L.; Le Royer, C.; Hartmann, J.M.; Loup, V.; Meuris, Marc; De Jaeger, Brice; Raskin, G. (2005)

    • Germanium deep-submicron p-FET and n-FET devices, fabricated on germanium-on-insulator substrates 

      Meuris, Marc; De Jaeger, Brice; Van Steenbergen, Jan; Bonzom, Renaud; Caymax, Matty; Houssa, Michel; Kaczer, Ben; Leys, Frederik; Martens, Koen; Opsomer, Karl; Pourghaderi, Mohammad Ali; Satta, Alessandra; Simoen, Eddy; Terzieva, Valentina; Van Moorhem, Els; Winderickx, Gillis; Loo, Roger; Clarysse, Trudo; Conard, Thierry; Delabie, Annelies; Hellin, David; Janssens, Tom; Onsia, Bart; Sioncke, Sonja; Mertens, Paul; Snow, Jim; Van Elshocht, Sven; Vandervorst, Wilfried; Zimmerman, Paul; Brunco, David; Raskin, G.; Letertre, F.; Akatsu, T.; Billon, T.; Heyns, Marc (2007)