Browsing by author "Magyari-Kope, B."
Now showing items 1-3 of 3
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GeSn channel nMOSFETs: material potential and technological outlook
Gupta, Somya; Vincent, Benjamin; Lin, Dennis; Gunji, M.; Firrincieli, Andrea; Gencarelli, Federica; Magyari-Kope, B.; Yang, B.; Douhard, Bastien; Delmotte, Joris; Franquet, Alexis; Caymax, Matty; Dekoster, Johan; Nishi, Y.; Saraswat, K.C. (2012) -
H-treatment impact on conductive-filament formation and stability in Ta2O5-based resistive-switching memory cells
Goux, Ludovic; Kim, J. Y.; Magyari-Kope, B.; Nishi, Y.; Redolfi, Augusto; Jurczak, Gosia (2015) -
Theory and experiments of the impact of work function variability on threshold voltage variability in MOS devices
Zhang, Xiao; Mitard, Jerome; Ragnarsson, Lars-Ake; Hoffmann, Thomas Y.; Deal, Michael; Grubbs, M.E.; Li, Jing; Magyari-Kope, B.; Clemens, Bruce; Nishi, Yoshio (2012)