Browsing by author "Newcomb, S.B."
Now showing items 1-4 of 4
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Band offsets at interfaces of (100)InxGa1-xAs (0<x<0.53) with Al2O3 and HfO2
Afanasiev, Valeri; Stesmans, Andre; Brammertz, Guy; Delabie, Annelies; Sioncke, Sonja; O'Mahony, E; Povey, I.M.; Pemble, M.E.; O'Connor, E.; Hurley, P.K.; Newcomb, S.B. (2009) -
Capacitance-voltage and conductance analysis of high-k/InxGa1-xAs structures (x = 0, 0.15, 0.3, and 0.53)
Hurley, P.K.; O'Connor, E.; Monaghan, S.; Long, R.D.; O'Mahony, A.; Povey, I.M.; Cherkaoui, K.; Pemble, M.E.; MacHale, J.; Quinn, A.J.; Brammertz, Guy; Heyns, Marc; Newcomb, S.B.; Afanasiev, Valeri (2009) -
Energy barriers at interfaces between (100) InxGa1-xAs(0<=x<=0.53) and atomic layer deposited Al2O3 and HfO2
Afanasiev, Valeri; Stesmans, Andre; Brammertz, Guy; Delabie, Annelies; Sioncke, Sonja; O'Mahony, E; Povey, I.M.; Pemble, M.E.; O'Connor, E.; Hurley, P.K.; Newcomb, S.B. (2009) -
Structural and electrical properties of HfO2/n-InxGa1-xAs structures (x: 0, 0.15, 0.3 and 0.53)
Hurley, P.K.; O'Connor, E.; Monaghan, S.; Long, R.D.; O'Mahony, A.; Povey, I.M.; Cherkaoui, K.; MacHale, J.; Quinn, A.J.; Brammertz, Guy; Heyns, Marc; Newcomb, S.B.; Afanasiev, Valeri; Sonnet, A.M.; Galatage, R.V.; Jivani, M.N.; Vogel, E.M.; Wallace, R.M.; Pemble, M.E. (2009)