Browsing by author "Lanza, M."
Now showing items 1-4 of 4
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Channel hot-carriers degradation in MOSFETs: A conductive AFM study at the nanoscale
Bayerl, A.; Porti, Marc; Martin-Martinez, Javier; Lanza, M.; Rodriguez, Rosanna; Velayudhan, V.; Amat, Esteve; Nafria, Montse; Aymerich, X.; Gonzalez, Mireia B; Simoen, Eddy (2013) -
Influence of the magnetic field on dielectric breakdown in memristors based on h-BN stacks
Maldonado, D.; Roldan, J. B.; Roldan, A. M.; Jimenez-Molinos, F.; Hui, F.; Jing, Xu; Wen, C.; Lanza, M.; Shi, Yuanyuan (2020) -
Reversible dielectric breakdown in h-BN stacks: a statistical study of the switching voltages
Roldan, J. B.; Maldonado, D.; Jimenez-Molinos, F.; Acal, C.; Ruiz-Castro, J. E.; Aguilera, A. M.; Hui, F.; Kong, J.; Jing, X.; Wed, C.; Villena, M. A.; Lanza, M.; Shi, Yuanyuan (2020) -
Time series modeling of the cycle-to-cycle variability in h-BN based memristors
Roldan, J. B.; Maldonado, D.; Alonso, F. J.; Roldan, A. M.; Hui, F.; Jimenez-Molinos, F.; Aguilera, A. M.; Lanza, M.; Shi, Yuanyuan (2021)