Browsing by author "Lin, Wei-Syuan"
Now showing items 1-3 of 3
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High Threshold Voltage Enhancement-Mode Regrown p-GaN Gate HEMTs With a Robust Forward Time-Dependent Gate Breakdown Stability
Tang, Shun-Wei; Huang, Zhen-Hong; Chen, Szu-Chia; Lin, Wei-Syuan; de Jaeger, Brice; Wellekens, Dirk; Borga, Matteo; Bakeroot, Benoit; Decoutere, Stefaan; Wu, Tian-Li (2022) -
Toward Understanding the Failure Mechanism in p-GaN Gate HEMTs Operating in Reverse Conduction Diode Mode
Lin, Wei-Syuan; Bakeroot, Benoit; Huang, Zhen-Hong; Lo, Ting-Chun; Borga, Matteo; Wellekens, Dirk; Posthuma, Niels; Decoutere, Stefaan; Wu, Tian-Li (2024) -
Using Gate Leakage Conduction to Understand Positive Gate Bias Induced Threshold Voltage Shift in p-GaN Gate HEMTs
Tang, Shun-Wei; Bakeroot, Benoit; Huang, Zhen-Hong; Chen, Szu-Chia; Lin, Wei-Syuan; Lo, Ting-Chun; Borga, Matteo; Wellekens, Dirk; Posthuma, Niels; Decoutere, Stefaan; Wu, Tian-Li (2023-02)