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Using Gate Leakage Conduction to Understand Positive Gate Bias Induced Threshold Voltage Shift in p-GaN Gate HEMTs
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Authors
Tang, Shun-Wei
;
Bakeroot, Benoit
;
Huang, Zhen-Hong
;
Chen, Szu-Chia
;
Lin, Wei-Syuan
;
Lo, Ting-Chun
;
Borga, Matteo
;
Wellekens, Dirk
;
Posthuma, Niels
;
Decoutere, Stefaan
;
Wu, Tian-Li
DOI
10.1109/TED.2022.3231566
ISSN
0018-9383
Issue
2
Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume
70
Title
Using Gate Leakage Conduction to Understand Positive Gate Bias Induced Threshold Voltage Shift in p-GaN Gate HEMTs
Publication type
Journal article
Embargo date
9999-12-31
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Summary
3
20.500.12860/41025.3
*
2023-05-16T08:51:56Z
validation by library/open access desk
2
20.500.12860/41025.2
2023-01-27T09:09:22Z
validation by imec author
1
20.500.12860/41025
2023-01-25T03:19:38Z
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