Browsing by author "Posthuma, Niels"
Now showing items 1-20 of 148
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1.2 kV Enhancement-Mode p-GaN Gate HEMTs on 200 mm Engineered Substrates
Kumar, Sujit; Geens, Karen; Vohra, Anurag; Wellekens, Dirk; Cingu, Deepthi; Fabris, Elena; Cosnier, Thibault; Hahn, H.; Bakeroot, Benoit; Posthuma, Niels; Langer, Robert; Decoutere, Stefaan (2024) -
18% efficiency IBC cell with rear-surface processed on quartz
Dross, Frederic; O'Sullivan, Barry; Debucquoy, Maarten; Bearda, Twan; Govaerts, Jonathan; Labie, Riet; Loozen, Xavier; Granata, Stefano; El Daif, Ounsi; Trompoukis, Christos; Van Nieuwenhuysen, Kris; Meuris, Marc; Gordon, Ivan; Posthuma, Niels; Baert, Kris; Poortmans, Jef; Boulord, Caroline; Beaucarne, Guy (2013) -
3-D device electrothermal simulation for analysis of multifinger power HEMTs
Chvála, Aleš; Marek, Juraj; Satka, Alexander; Priesol, Juraj; Príbytnŭ, Patrik; Donoval, Daniel; Stoffels, Steve; Posthuma, Niels; Decoutere, Stefaan (2018) -
650 V p-GaN gate power HEMTs on 200 mm engineered substrates
Geens, Karen; Li, Xiangdong; Zhao, Ming; Guo, Weiming; Wellekens, Dirk; Posthuma, Niels; Fahle, Dirk; Aktas, Ozgur; Odnoblyudov, Vlad; Decoutere, Stefaan (2019) -
A compact model based on the Lambert function for AlGaN/GaN Schottky barrier gated-edge termination
Trojman, Lionel; Acurio, Eliana; De Jaeger, Brice; Posthuma, Niels; Decoutere, Stefaan; Bakeroot, Benoit (2023) -
A deep-level transient spectroscopy study of silicon interface states using different silicon nitride surface passivation schemes
Gong, Chun; Simoen, Eddy; Posthuma, Niels; Van Kerschaver, Emmanuel; Poortmans, Jef; Mertens, Robert (2010) -
A distributed electrical model for interdigitated back contact silicon solar cells
Giaffreda, Daniele; Debucquoy, Maarten; Magnone, Paolo; Posthuma, Niels; Fiegna, Claudio (2014) -
A DLTS study of SiO2 and SiO2/SiNx bi-layer surface passivation of silicon
Simoen, Eddy; Gong, Chun; Posthuma, Niels; Van Kerschaver, Emmanuel; Poortmans, Jef; Mertens, Robert (2010) -
A DLTS study of SiO2 and SiO2/SiNx bi-layer surface passivation of silicon
Simoen, Eddy; Gong, Chun; Posthuma, Niels; Van Kerschaver, Emmanuel; Poortmans, Jef; Mertens, Robert (2010) -
A DLTS study of SiO2 and SiO2/SiNx surface passivation of silicon
Simoen, Eddy; Gong, Chun; Posthuma, Niels; Van Kerschaver, Emmanuel; Poortmans, Jef; Mertens, Robert (2011) -
Advanced material and technological concepts for photovoltaic solar cells based on thin silicon wafers
Dross, Frederic; Gordon, Ivan; Flamand, Giovanni; John, Joachim; Posthuma, Niels; Van Hoeymissen, Jan; Van Kerschaver, Emmanuel; Poortmans, Jef (2010) -
Advanced phosphorus emitters for high efficiency Si solar cells
Janssens, Tom; Posthuma, Niels; Van Kerschaver, Emmanuel; Baert, Kris; Choulat, Patrick; Everaert, Jean-Luc; Goossens, Jozefien; Vandervorst, Wilfried; Poortmans, Jef (2009) -
Advanced phosphorus emitters for high efficiency Si solar cells
Janssens, Tom; Posthuma, Niels; Van Kerschaver, Emmanuel; Baert, Kris; Choulat, Patrick; Goossens, Jozefien; Vandervorst, Wilfried; Poortmans, Jef (2009) -
An industry-ready 200 mm p-GaN E-mode GaN-on-Si power technology
Posthuma, Niels; You, Shuzhen; Stoffels, Steve; Wellekens, Dirk; Liang, Hu; Zhao, Ming; De Jaeger, Brice; Geens, Karen; Ronchi, Nicolo; Decoutere, Stefaan; Moens, Peter; Banerjee, Abhishek; Ziad, Hocine; Tack, Marnix (2018) -
An integrated approach for selective emitter formation
Allebe, Christophe; Tous, L.; Vermang, Bart; Janssens, Tom; Choulat, Patrick; John, Joachim; Posthuma, Niels; Van Kerschaver, Emmanuel (2009) -
Analysis of the gate capacitance-voltage characteristics in p-GaN/AlGaN/GaN heterostructures
Wu, Tian-Li; Bakeroot, Benoit; Liang, Hu; Posthuma, Niels; You, Shuzhen; Ronchi, Nicolo; Stoffels, Steve; Marcon, Denis; Decoutere, Stefaan (2017) -
Analytical model for the threshold voltage of p-(Al)GaN high-electron-mobility transistors
Bakeroot, Benoit; Stockman, Arno; Posthuma, Niels; Stoffels, Steve; Decoutere, Stefaan (2018) -
Another approach to form p+ emitter for Cz rear junction n-type solar cells: above 17% efficiency cells with CVD boron-doped epitaxial emitter
Gong, Chun; Van Nieuwenhuysen, Kris; Posthuma, Niels; Van Kerschaver, Emmanuel; Poortmans, Jef (2009) -
Another approach to form p+ emitter for rear junction n-type solar cells: above 17.0% efficiency cells with CVD boron-doped epitaxial emitter
Gong, Chun; Van Nieuwenhuysen, Kris; Posthuma, Niels; Van Kerschaver, Emmanuel; Poortmans, Jef (2011) -
Boron doped selective silicon epitaxy: high efficiency and process simplification in IBC cells
Recaman Payo, Maria; Posthuma, Niels; Uruena De Castro, Angel; Debucquoy, Maarten; Poortmans, Jef (2013)