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Analytical model for the threshold voltage of p-(Al)GaN high-electron-mobility transistors
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Analytical model for the threshold voltage of p-(Al)GaN high-electron-mobility transistors
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Date
2018
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Bakeroot, Benoit
;
Stockman, Arno
;
Posthuma, Niels
;
Stoffels, Steve
;
Decoutere, Stefaan
Journal
IEEE Transactions on Electron Devices
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1946
since deposited on 2021-10-25
Acq. date: 2025-12-13
Citations
Metrics
Views
1946
since deposited on 2021-10-25
Acq. date: 2025-12-13
Citations