Analytical model for the threshold voltage of p-(Al)GaN high-electron-mobility transistors

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Authors

Bakeroot, Benoit; Stockman, Arno; Posthuma, Niels; Stoffels, Steve; Decoutere, Stefaan

ISSN

0018-9383

Issue

1

Journal

IEEE Transactions on Electron Devices

Volume

65

Title

Analytical model for the threshold voltage of p-(Al)GaN high-electron-mobility transistors

Publication type

Journal article

Embargo date

9999-12-31

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