Analytical model for the threshold voltage of p-(Al)GaN high-electron-mobility transistors

dc.contributor.author	Bakeroot, Benoit
dc.contributor.author	Stockman, Arno
dc.contributor.author	Posthuma, Niels
dc.contributor.author	Stoffels, Steve
dc.contributor.author	Decoutere, Stefaan
dc.contributor.imecauthor	Bakeroot, Benoit
dc.contributor.imecauthor	Stockman, Arno
dc.contributor.imecauthor	Posthuma, Niels
dc.contributor.imecauthor	Stoffels, Steve
dc.contributor.imecauthor	Decoutere, Stefaan
dc.contributor.orcidimec	Bakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimec	Posthuma, Niels::0000-0002-6029-1909
dc.contributor.orcidimec	Decoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned	2021-10-25T16:38:03Z
dc.date.available	2021-10-25T16:38:03Z
dc.date.embargo	9999-12-31
dc.date.issued	2018
dc.identifier.issn	0018-9383
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/30190
dc.identifier.url	https://ieeexplore.ieee.org/document/8141943/
dc.source.beginpage	79
dc.source.endpage	86
dc.source.issue	1
dc.source.journal	IEEE Transactions on Electron Devices
dc.source.volume	65
dc.title	Analytical model for the threshold voltage of p-(Al)GaN high-electron-mobility transistors
dc.type	Journal article
dspace.entity.type	Publication
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