dc.contributor.author | Tang, Shun-Wei | |
dc.contributor.author | Bakeroot, Benoit | |
dc.contributor.author | Huang, Zhen-Hong | |
dc.contributor.author | Chen, Szu-Chia | |
dc.contributor.author | Lin, Wei-Syuan | |
dc.contributor.author | Lo, Ting-Chun | |
dc.contributor.author | Borga, Matteo | |
dc.contributor.author | Wellekens, Dirk | |
dc.contributor.author | Posthuma, Niels | |
dc.contributor.author | Decoutere, Stefaan | |
dc.contributor.author | Wu, Tian-Li | |
dc.date.accessioned | 2023-05-16T08:53:20Z | |
dc.date.available | 2023-01-25T03:19:38Z | |
dc.date.available | 2023-01-27T09:27:49Z | |
dc.date.available | 2023-05-16T08:53:20Z | |
dc.date.issued | 2023-02 | |
dc.identifier.issn | 0018-9383 | |
dc.identifier.other | WOS:000910525500001 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/41025.3 | |
dc.source | WOS | |
dc.title | Using Gate Leakage Conduction to Understand Positive Gate Bias Induced Threshold Voltage Shift in p-GaN Gate HEMTs | |
dc.type | Journal article | |
dc.contributor.imecauthor | Bakeroot, Benoit | |
dc.contributor.imecauthor | Borga, Matteo | |
dc.contributor.imecauthor | Wellekens, Dirk | |
dc.contributor.imecauthor | Posthuma, Niels | |
dc.contributor.imecauthor | Decoutere, Stefaan | |
dc.contributor.orcidimec | Bakeroot, Benoit::0000-0003-4392-1777 | |
dc.contributor.orcidimec | Borga, Matteo::0000-0003-3087-6612 | |
dc.contributor.orcidimec | Posthuma, Niels::0000-0002-6029-1909 | |
dc.contributor.orcidimec | Decoutere, Stefaan::0000-0001-6632-6239 | |
dc.contributor.orcidimec | Wellekens, Dirk::0000-0003-4532-5784 | |
dc.date.embargo | 9999-12-31 | |
dc.identifier.doi | 10.1109/TED.2022.3231566 | |
dc.source.numberofpages | 5 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 449 | |
dc.source.endpage | 453 | |
dc.source.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | |
dc.source.issue | 2 | |
dc.source.volume | 70 | |
imec.availability | Published - open access | |
dc.description.wosFundingText | This work was supported in part by the "Center for the Semiconductor Technology Research" from the Featured Areas Research Center Program within the framework of the Higher Education Sprout Project by the Ministry of Education (MOE) in Taiwan, in part by the National Science and Technology Council (NSTC), Taiwan, under Grant 111-2634-F-A49-008 and Grant 111-2622-8-A49-018-SB, and in part by the Young Scholar Fellowship Program under Grant 111-2636-E-A49-012. The review of this article was arranged by Editor M. Meneghini. (Corresponding author: Tian-Li Wu.) | |