Using Gate Leakage Conduction to Understand Positive Gate Bias Induced Threshold Voltage Shift in p-GaN Gate HEMTs

Tang, Shun-Wei; Bakeroot, Benoit; Huang, Zhen-Hong; Chen, Szu-Chia; Lin, Wei-Syuan; Lo, Ting-Chun; Borga, Matteo; Wellekens, Dirk; Posthuma, Niels; Decoutere, Stefaan; Wu, Tian-Li

doi:10.1109/ted.2022.3231566

Publication:

Using Gate Leakage Conduction to Understand Positive Gate Bias Induced Threshold Voltage Shift in p-GaN Gate HEMTs

Date

2023

Journal article

https://doi.org/10.1109/ted.2022.3231566

Simple item page Full metadata Statistics

Files

Published version 2.42 MB

Author(s)

;

;

;

;

;

;

;

;

;

;

Journal

IEEE TRANSACTIONS ON ELECTRON DEVICES

Statistics

1313 since deposited on 2023-01-25

3last month

Acq. date: 2026-10-12

Using Gate Leakage Conduction to Understand Positive Gate Bias Induced Threshold Voltage Shift in p-GaN Gate HEMTs

Date

Files

Author(s)

Journal

Abstract

Description

Statistics

Views

Citations

Statistics

Views

Citations