Publication:

Using Gate Leakage Conduction to Understand Positive Gate Bias Induced Threshold Voltage Shift in p-GaN Gate HEMTs

Date

2023-02
Journal article
https://doi.org/10.1109/TED.2022.3231566
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dc.contributor.authorTang, Shun-Wei
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorHuang, Zhen-Hong
dc.contributor.authorChen, Szu-Chia
dc.contributor.authorLin, Wei-Syuan
dc.contributor.authorLo, Ting-Chun
dc.contributor.authorBorga, Matteo
dc.contributor.authorWellekens, Dirk
dc.contributor.authorPosthuma, Niels
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorWu, Tian-Li
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorBorga, Matteo
dc.contributor.imecauthorWellekens, Dirk
dc.contributor.imecauthorPosthuma, Niels
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimecBorga, Matteo::0000-0003-3087-6612
dc.contributor.orcidimecPosthuma, Niels::0000-0002-6029-1909
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.contributor.orcidimecWellekens, Dirk::0000-0003-4532-5784
dc.date.accessioned2023-05-16T08:53:20Z
dc.date.available2023-01-25T03:19:38Z
dc.date.available2023-01-27T09:27:49Z
dc.date.available2023-05-16T08:53:20Z
dc.date.embargo9999-12-31
dc.date.issued2023-02
dc.description.wosFundingTextThis work was supported in part by the "Center for the Semiconductor Technology Research" from the Featured Areas Research Center Program within the framework of the Higher Education Sprout Project by the Ministry of Education (MOE) in Taiwan, in part by the National Science and Technology Council (NSTC), Taiwan, under Grant 111-2634-F-A49-008 and Grant 111-2622-8-A49-018-SB, and in part by the Young Scholar Fellowship Program under Grant 111-2636-E-A49-012. The review of this article was arranged by Editor M. Meneghini. (Corresponding author: Tian-Li Wu.)
dc.identifier.doi10.1109/TED.2022.3231566
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/41025
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
dc.source.beginpage449
dc.source.endpage453
dc.source.issue2
dc.source.journalIEEE TRANSACTIONS ON ELECTRON DEVICES
dc.source.numberofpages5
dc.source.volume70
dc.subject.keywordsV-TH
dc.title

Using Gate Leakage Conduction to Understand Positive Gate Bias Induced Threshold Voltage Shift in p-GaN Gate HEMTs

dc.typeJournal article
dspace.entity.typePublication
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