Browsing by author "Decoutere, Stefaan"
Now showing items 1-20 of 437
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1.2 kV Enhancement-Mode p-GaN Gate HEMTs on 200 mm Engineered Substrates
Kumar, Sujit; Geens, Karen; Vohra, Anurag; Wellekens, Dirk; Cingu, Deepthi; Fabris, Elena; Cosnier, Thibault; Hahn, H.; Bakeroot, Benoit; Posthuma, Niels; Langer, Robert; Decoutere, Stefaan (2024) -
200 mm industrial-ready dispersion-free GaN-on-Si buffer technology for 650 V rated power application
Zhao, Ming; Li, Xiangdong; Decoutere, Stefaan (2019) -
200 V enhancement-mode p-GaN HEMTs fabricated on 200 mm GaN-on-SOI with trench isolation for monolithic integration
Li, Xiangdong; Van Hove, Marleen; Zhao, Ming; Geens, Karen; Lempinen, Vesa-Pekka; Sormunen, Jaakko; Stoffels, Steve; Groeseneken, Guido; Decoutere, Stefaan (2017) -
200 V enhancement-mode p-GaN HEMTs fabricated on 200 mm GaN-on-SOI with trench isolation for monolithic integration
Li, Xiangdong; Van Hove, Marleen; Zhao, Ming; Geens, Karen; Lempinen, Vesa-Pekka; Sormunen, Jaakko; Groeseneken, Guido; Decoutere, Stefaan (2017) -
200 V GaN-on-SOI Smart Power Platform for Monolithic GaN Power ICs
Cosnier, Thibault; Syshchyk, Olga; De Jaeger, Brice; Geens, Karen; Cingu, Deepthi; Fabris, Elena; Borga, Matteo; Vohra, Anurag; Zhao, Ming; Bakeroot, Benoit; Wellekens, Dirk; Magnani, Alessandro; Vudumula, Pavan; Chatterjee, Urmimala; Langer, Robert; Decoutere, Stefaan (2021) -
200mm GaN-on-Si epitaxy and e-mode device technology
Marcon, Denis; Saripalli, Yoga; Decoutere, Stefaan (2015) -
24GHz LNA in 90nm RF-CMOS with high-Q above-IC inductors
Dupuis, Olivier; Sun, Xiao; Carchon, Geert; Soussan, Philippe; Ferndahl, Mattias; Decoutere, Stefaan; De Raedt, Walter (2005-09) -
2kV breakdown voltage GaN-on-Si DHFETs with sub-micron thick AlGaN Buffer
Srivastava, Puneet; Cheng, Kai; Das, Jo; Van Hove, Marleen; Leys, Maarten; Marcon, Denis; Visalli, Domenica; Geens, Karen; Decoutere, Stefaan; Mertens, Robert; Borghs, Gustaaf (2012) -
3-D device electrothermal simulation for analysis of multifinger power HEMTs
Chvála, Aleš; Marek, Juraj; Satka, Alexander; Priesol, Juraj; Príbytnŭ, Patrik; Donoval, Daniel; Stoffels, Steve; Posthuma, Niels; Decoutere, Stefaan (2018) -
45nm planar bulk CMOS 23GHz LNA with above IC inductors
Wen-Chieh, Wang; Zue-Der, Huang; Carchon, Nadine; Mercha, Abdelkarim; Decoutere, Stefaan; De Raedt, Walter; Chung-Yu, Wu (2010) -
650 V dispersion-free enhancement-mode GaN-on-Si HEMTs processed in a 200 mm CMOS fab
Kim, J.-Y.; Lee, D.; Kim, Y.S.; Son, J.; Luo, W.; Decoutere, Stefaan (2017) -
650 V p-GaN gate power HEMTs on 200 mm engineered substrates
Geens, Karen; Li, Xiangdong; Zhao, Ming; Guo, Weiming; Wellekens, Dirk; Posthuma, Niels; Fahle, Dirk; Aktas, Ozgur; Odnoblyudov, Vlad; Decoutere, Stefaan (2019) -
90nm RF CMOS technology for low-power 900MHz applications
Ramos, Javier; Mercha, Abdelkarim; Jeamsaksiri, Wutthinan; Linten, Dimitri; Jenei, Snezana; Rooyackers, Rita; Verbeeck, Rita; Thijs, Steven; Scholten, Andries; Wambacq, Piet; Debusschere, Ingrid; Decoutere, Stefaan (2004) -
A 0.25μm SiGe BiCMOS technology including integrated RF passive components optimised for low power applications
Van Huylenbroeck, Stefaan; Jenei, Snezana; Carchon, Geert; Piontek, Andreas; Vleugels, Frank; Decoutere, Stefaan (2003) -
A 0.35µm BiCMOS process with selective epitaxial SiGe bipolar transistors
Kuhn, Rudiger; Decoutere, Stefaan; Caymax, Matty; Vleugels, Frank; Verschooten, Eric; Loo, Roger; Loheac, J. L. (1999) -
A 0.35μm BiCMOS technology with 50 GHz Fmax selective epitaxial base transistors for RF applications
Decoutere, Stefaan; Kuhn, Rudiger; Vleugels, Frank; Vancuyck, Geert; Caymax, Matty; Mohadjeri, Babak; Deferm, Ludo (1998) -
A 0.35μm SiGe BiCMOS process featuring a 80 GHz Fmax HBT and integrated high-Q RF passive components
Decoutere, Stefaan; Vleugels, Frank; Kuhn, Rudiger; Loo, Roger; Caymax, Matty; Jenei, Snezana; Croon, Jeroen; Van Huylenbroeck, Stefaan; Da Rold, Martina; Rosseel, Erik; Chevalier, P.; Coppens, P. (2000) -
A 1 V 23 GHz low-noise amplifier in 45 nm planar bulk-CMOS technology with high-Q above-IC inductors
Wang, W.C.; Huang, Z.D.; Carchon, Geert; Mercha, Abdelkarim; Decoutere, Stefaan; De Raedt, Walter; Wu, C.Y. (2009) -
A 328 uW5 GHz voltage-controlled oscillator in 90 nm CMOS with high-quality thin-film post-processed inductor
Linten, Dimitri; Sun, Xiao; Carchon, Geert; Jeamsaksiri, Wutthinan; Mercha, Abdelkarim; Ramos, Javier; Jenei, Snezana; Aspemyr, Lars; Scholten, Andries; Wambacq, Piet; Decoutere, Stefaan; Donnay, Stephane; De Raedt, Walter (2004-06) -
A 400GHz fMAX fully self-aligned SiGe:C HBT architecture
Van Huylenbroeck, Stefaan; Sibaja-Hernandez, Arturo; Venegas, Rafael; You, Shuzhen; Winderickx, Gillis; Radisic, Dunja; Lee, Willie; Ong, Patrick; Vandeweyer, Tom; Nguyen, Duy; De Meyer, Kristin; Decoutere, Stefaan (2009-10)