Browsing by author "Bakeroot, Benoit"
Now showing items 1-20 of 117
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1.2 kV Enhancement-Mode p-GaN Gate HEMTs on 200 mm Engineered Substrates
Kumar, Sujit; Geens, Karen; Vohra, Anurag; Wellekens, Dirk; Cingu, Deepthi; Fabris, Elena; Cosnier, Thibault; Hahn, H.; Bakeroot, Benoit; Posthuma, Niels; Langer, Robert; Decoutere, Stefaan (2024) -
200 V GaN-on-SOI Smart Power Platform for Monolithic GaN Power ICs
Cosnier, Thibault; Syshchyk, Olga; De Jaeger, Brice; Geens, Karen; Cingu, Deepthi; Fabris, Elena; Borga, Matteo; Vohra, Anurag; Zhao, Ming; Bakeroot, Benoit; Wellekens, Dirk; Magnani, Alessandro; Vudumula, Pavan; Chatterjee, Urmimala; Langer, Robert; Decoutere, Stefaan (2021) -
A 16 channel high-voltage driver with 14 bit resolution for driving piezoelectric actuators
Pierco, Ramses; Torfs, Guy; Verbrugghe, Jochen; Bakeroot, Benoit; Bauwelinck, Johan (2015) -
A compact model based on the Lambert function for AlGaN/GaN Schottky barrier gated-edge termination
Trojman, Lionel; Acurio, Eliana; De Jaeger, Brice; Posthuma, Niels; Decoutere, Stefaan; Bakeroot, Benoit (2023) -
A high-voltage switching ADSL line-driver, with an n-type output stage
Buyle, J.; De Gezelle, V.; Bakeroot, Benoit; Doutreloigne, Jan (2008-07) -
A new charge based compact model for lateral asymmetric MOSFET and its application to high voltage MOSFET modeling
Chauhan, Y.; Krummenacher, F.; Anghel, C.; Gillon, R.; Bakeroot, Benoit; Declercq, M.; Ionescu, A. (2007-01) -
A new lateral-IGBT structure with a wider safe operating area
Bakeroot, Benoit; Doutreloigne, Jan; Vanmeerbeek, P.; Moens, P. (2007) -
A new LIGBT structure to suppress substrate currents in a junction isolated technology
Bakeroot, Benoit; Doutreloigne, Jan; Moens, P. (2005) -
A new substrate current free nLIGBT for junction isolated technologies
Bakeroot, Benoit; Doutreloigne, Jan; Moens, Peter (2004) -
A new type of level-shifter for n-type high side switches used in high-voltage switching ADSL line-drivers
Buyle, J.; De Gezelle, V.; Bakeroot, Benoit; Doutreloigne, Jan (2008-08) -
AlON gate dielectric and gate trench cleaning for improved relia-bility of vertical GaN MOSFET
Filho Goncalez, Walter; Borga, Matteo; Geens, Karen; Cingu, Deepthi; Chatterjee, Urmimala; You, Shuzhen; Bakeroot, Benoit; Decoutere, Stefaan; Knaepen, Werner; Arnou, Panagiota; Homm, Pia (2022) -
An experimental approach for bias-dependent drain series resistance evaluation in asymmetric HV MOSFETs
Hefyene, N.; Anghel, C.; Ionescu, A. M.; Frere, S.; Gillon, R.; Vermandel, Miguel; Bakeroot, Benoit; Doutrloigne, J. (2001) -
An ultrafast and latch-up free lateral IGBT with hole diverter for junction-isolated technologies
Bakeroot, Benoit; Doutreloigne, Jan; Vanmeerbeek, P.; Moens, P. (2007-06) -
Analysis of a narrow-base laterel IGBT with double buried layer for junction-isolated smart-power technologies
Bakeroot, Benoit; Doutreloigne, Jan; Vanmeerbeek, P.; Moens, P. (2008) -
Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics
Wu, Tian-Li; Marcon, Denis; Ronchi, Nicolo; Bakeroot, Benoit; You, Shuzhen; Stoffels, Steve; Van Hove, Marleen; Bisi, Davide; Meneghini, Matteo; Groeseneken, Guido; Decoutere, Stefaan (2015) -
Analysis of the gate capacitance-voltage characteristics in p-GaN/AlGaN/GaN heterostructures
Wu, Tian-Li; Bakeroot, Benoit; Liang, Hu; Posthuma, Niels; You, Shuzhen; Ronchi, Nicolo; Stoffels, Steve; Marcon, Denis; Decoutere, Stefaan (2017) -
Analytical model for the threshold voltage of p-(Al)GaN high-electron-mobility transistors
Bakeroot, Benoit; Stockman, Arno; Posthuma, Niels; Stoffels, Steve; Decoutere, Stefaan (2018) -
Assessment of N-type and P-type doping in (Al,Ga)N heterostructures by Scanning probe microscopy techniques
Minj, Albert; Zhao, Ming; Bakeroot, Benoit; Paredis, Kristof; Wouters, Lennaert; Hantschel, Thomas; Decoutere, Stefaan (2021) -
Au-free AlGaN/GaN power diode on 8 in Si substrate with gated edge termination
Lenci, Silvia; De Jaeger, Brice; Carbonell, Laure; Hu, Jie; Mannaert, Geert; Wellekens, Dirk; You, Shuzhen; Bakeroot, Benoit; Decoutere, Stefaan (2013) -
Buffer vertical leakage mechanism and reliability of 200-mm GaN-on-SOI
Li, Xiangdong; Zhao, Ming; Bakeroot, Benoit; Geens, Karen; Guo, Weiming; Lempinen, Vesa-Pekka; Sormunen, Jaakko; Groeseneken, Guido; Decoutere, Stefaan (2019)