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Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics
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1915 since deposited on 2021-10-23
Acq. date: 2026-01-08
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Views
1915 since deposited on 2021-10-23
Acq. date: 2026-01-08
Citations