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Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics

Date

2015
Journal article
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dc.contributor.authorWu, Tian-Li
dc.contributor.authorMarcon, Denis
dc.contributor.authorRonchi, Nicolo
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorYou, Shuzhen
dc.contributor.authorStoffels, Steve
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorBisi, Davide
dc.contributor.authorMeneghini, Matteo
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorDecoutere, Stefaan
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorRonchi, Nicolo
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorYou, Shuzhen
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecRonchi, Nicolo::0000-0002-7961-4077
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-23T01:10:19Z
dc.date.available2021-10-23T01:10:19Z
dc.date.issued2015
dc.identifier.issn0038-1101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26194
dc.identifier.urlhttp://www.sciencedirect.com/science/article/pii/S0038110114002159
dc.source.beginpage127
dc.source.endpage130
dc.source.journalSolid-State Electronics
dc.source.volume103
dc.title

Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics

dc.typeJournal article
dspace.entity.typePublication
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