Browsing by author "Wu, Tian-Li"
Now showing items 1-20 of 48
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Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics
Wu, Tian-Li; Marcon, Denis; Ronchi, Nicolo; Bakeroot, Benoit; You, Shuzhen; Stoffels, Steve; Van Hove, Marleen; Bisi, Davide; Meneghini, Matteo; Groeseneken, Guido; Decoutere, Stefaan (2015) -
Analysis of the gate capacitance-voltage characteristics in p-GaN/AlGaN/GaN heterostructures
Wu, Tian-Li; Bakeroot, Benoit; Liang, Hu; Posthuma, Niels; You, Shuzhen; Ronchi, Nicolo; Stoffels, Steve; Marcon, Denis; Decoutere, Stefaan (2017) -
Combined PEALD gate-dielectric and in-situ SiN cap-layer for reduced Vth shift and RDS-ON dispersion of AlGaN/GaN HEMTs on 200 mm Si wafer
Ronchi, Nicolo; De Jaeger, Brice; Van Hove, Marleen; Roelofs, Robin; Wu, Tian-Li; Hu, Jie; Kang, Xuanwu; Decoutere, Stefaan (2014) -
Combined plasma-enhanced-atomic-layer-deposition gate dielectric and in situ SiN cap layer for reduced threshold voltage shift and dynamic ON-resistance dispersion of AlGaN
Ronchi, Nicolo; De Jaeger, Brice; Van Hove, Marleen; Roelofs, Robin; Wu, Tian-Li; Hu, Jie; Kang, Xuanwu; Decoutere, Stefaan (2015) -
Comprehensive Investigation of Constant Voltage Stress Time-Dependent Breakdown and Cycle-to-Breakdown Reliability in Y-Doped and Si-Doped HfO2 Metal-Ferroelectric-Metal Memory
Chang, Ting-Yu; Wang, Kuan-Chi; Liu, Hsien-Yang; Hseun, Jing-Hua; Peng, Wei-Cheng; Ronchi, Nicolo; Celano, Umberto; Banerjee, Kaustuv; Van Houdt, Jan; Wu, Tian-Li (2023) -
Comprehensive investigation of on-state stress on D-mode AlGaN/GaN MIS-HEMTs
Wu, Tian-Li; Marcon, Denis; Zahid, Mohammed; Van Hove, Marleen; Decoutere, Stefaan; Groeseneken, Guido (2013) -
Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors
Wu, Tian-Li; Marcon, Denis; Bakeroot, Benoit; De Jaeger, Brice; Lin, Dennis; Franco, Jacopo; Stoffels, Steve; Van Hove, Marleen; Groeseneken, Guido; Decoutere, Stefaan (2015) -
Demonstration of 64 Conductance States and Large Dynamic Range in Sidoped HfO2 FeFETs under Neuromorphic Computing Operations
Wang, Yu-Yun; Wang, Kuang-Chi; Wu, Cheng-Hung; Chang, Ting-Yu; Ronchi, Nicolo; Banerjee, Kaustuv; Van den Bosch, Geert; Van Houdt, Jan; Wu, Tian-Li (2022-04-18) -
Device breakdown optimization of Al2O3/GaN E-mode MISFETs
Kang, Xuanwu; Wellekens, Dirk; Van Hove, Marleen; De Jaeger, Brice; Ronchi, Nicolo; Wu, Tian-Li; You, Shuzhen; Bakeroot, Benoit; Hu, Jie; Marcon, Denis; Stoffels, Steve; Decoutere, Stefaan (2016) -
Device optimization for 200V GaN-on-SOI Platform for Monolithicly Integrated Power Circuits
Syshchyk, Olga; Cosnier, Thibault; Huang, Zheng-Hong; Cingu, Deepthi; Wellekens, Dirk; Vohra, Anurag; Geens, Karen; Vudumula, Pavan; Chatterjee, Urmimala; Decoutere, Stefaan; Wu, Tian-Li; Bakeroot, Benoit (2022) -
Direct comparison of GaN-based e-mode architectures (recessed MISHEMT and p-GaN HEMTs) processed on 200mm GaN-on-Si with Au-free technology
Marcon, Denis; Van Hove, Marleen; De Jaeger, Brice; Posthuma, Niels; Wellekens, Dirk; You, Shuzhen; Kang, Xuanwu; Wu, Tian-Li; Willems, Maarten; Stoffels, Steve; Decoutere, Stefaan (2015) -
Evidence of hot-electron degradation in GaN-based MIS-HEMTs submitted to high temperature constant source current stress
Ruzzarin, Maria; Meneghini, Matteo; Rossetto, Isabella; Van Hove, Marleen; Stoffels, Steve; Wu, Tian-Li; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico (2016) -
Failure mode for p-GaN gates under forward gate stress with varying Mg concentration
Stoffels, Steve; Bakeroot, Benoit; Wu, Tian-Li; Marcon, Denis; Posthuma, Niels; Decoutere, Stefaan; Tallarico, A.N.; Fiegna, C. (2017) -
Forward bias gate breakdown mechanism in enhancement-mode p-GaN gate AlGaN/GaN high-electron mobility transistors
Wu, Tian-Li; Marcon, Denis; You, Shuzhen; Posthuma, Niels; Bakeroot, Benoit; Stoffels, Steve; Van Hove, Marleen; Groeseneken, Guido; Decoutere, Stefaan (2015) -
Forward gate bias on-state stress on AlGaN/GaN MIS-HEMTs for power switching applications
Wu, Tian-Li; Marcon, Denis; Zahid, Mohammed; Van Hove, Marleen; Stoffels, Steve; Srivastava, Puneet; Decoutere, Stefaan; Groeseneken, Guido (2012) -
Gate stability of enhancement mode GaN power devices
Wu, Tian-Li; Marcon, Denis; De Jaeger, Brice; Posthuma, Niels; Bakeroot, Benoit; You, Shuzhen; Franco, Jacopo; Stoffels, Steve; Van Hove, Marleen; Groeseneken, Guido; Decoutere, Stefaan (2016) -
Gate stability of GaN-based HEMTs with p-type gate
Meneghini, Matteo; Rossetto, Isabella; Rizzato, Vanessa; Stoffels, Steve; Van Hove, Marleen; Posthuma, Niels; Wu, Tian-Li; Marcon, Denis; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico (2016) -
High temperature behaviour of GaN-on-Si high power MISHEMT devices
Wellekens, Dirk; Venegas, Rafael; Kang, Xuanwu; Zahid, Mohammed; Wu, Tian-Li; Marcon, Denis; Srivastava, Puneet; Van Hove, Marleen; Decoutere, Stefaan (2012) -
High Threshold Voltage Enhancement-Mode Regrown p-GaN Gate HEMTs With a Robust Forward Time-Dependent Gate Breakdown Stability
Tang, Shun-Wei; Huang, Zhen-Hong; Chen, Szu-Chia; Lin, Wei-Syuan; de Jaeger, Brice; Wellekens, Dirk; Borga, Matteo; Bakeroot, Benoit; Decoutere, Stefaan; Wu, Tian-Li (2022) -
Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs
Rossetto, Isabella; Meneghini, Matteo; Bisi, Davide; Barbato, A; Van Hove, Marleen; Marcon, Denis; Wu, Tian-Li; Decoutere, Stefaan; Meneghesso, Gaudio; Zanoni, Enrico (2015)