Browsing by author "Borga, Matteo"
Now showing items 1-20 of 49
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200 V GaN-on-SOI Smart Power Platform for Monolithic GaN Power ICs
Cosnier, Thibault; Syshchyk, Olga; De Jaeger, Brice; Geens, Karen; Cingu, Deepthi; Fabris, Elena; Borga, Matteo; Vohra, Anurag; Zhao, Ming; Bakeroot, Benoit; Wellekens, Dirk; Magnani, Alessandro; Vudumula, Pavan; Chatterjee, Urmimala; Langer, Robert; Decoutere, Stefaan (2021) -
AlON gate dielectric and gate trench cleaning for improved relia-bility of vertical GaN MOSFET
Filho Goncalez, Walter; Borga, Matteo; Geens, Karen; Cingu, Deepthi; Chatterjee, Urmimala; You, Shuzhen; Bakeroot, Benoit; Decoutere, Stefaan; Knaepen, Werner; Arnou, Panagiota; Homm, Pia (2022) -
Analysis and Design of a Fully-Integrated Pulsed LiDAR Driver in 100V-GaN IC Technology
Bettini, Andrea; Cosnier, Thibault; Magnani, Alessandro; Syshchyk, Olga; Borga, Matteo; Decoutere, Stefaan; Neviani, Andrea (2022) -
Analysis of the drain-to-substrate leakage of power HEMTs grown on highly resistive silicon substrate
Borga, Matteo; Meneghini, Matteo; Stoffels, Steve; Van Hove, Marleen; Li, Xiangdong; Zhao, Ming; Meneghesso, Gaudenzio; Zanoni, Enrico (2018) -
Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs
Mukherjee, Kalparupa; Borga, Matteo; Ruzzarin, Maria; De Santi, Carlo; Stoffels, Steve; You, Shuzhen; Geens, Karen; Liang, Hu; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo (2020) -
Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs
Modolo, N.; Fregolent, M.; Masin, F.; Benato, A.; Bettini, A.; Buffolo, M.; De Santi, C.; Borga, Matteo; Posthuma, Niels; Bakeroot, Benoit; Decoutere, Stefaan; Vogrig, D.; Neviani, A.; Meneghesso, G.; Zanoni, E.; Meneghini, M. (2022) -
Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization
Mukherjee, Kalparupa; De Santi, Carlo; Borga, Matteo; Geens, Karen; You, Shuzhen; Bakeroot, Benoit; Decoutere, Stefaan; Diehle, Patrick; Huebner, Susanne; Altmann, Frank; Buffolo, Matteo; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo (2021) -
Compact Modeling of Nonideal Trapping/Detrapping Processes in GaN Power Devices
Modolo, N.; De Santi, C.; Baratella, Giulio; Bettini, A.; Borga, Matteo; Posthuma, Niels; Bakeroot, Benoit; You, Shuzhen; Decoutere, Stefaan; Bevilaqua, A.; Neviani, A.; Meneghesso, G.; Zanoni, E.; Meneghini, M. (2022) -
Correlation of heat transport mechanism and structural properties of GaN high electron mobility transistors
Mitterhuber, Lisa; Kosednar-Legenstein, Barbara; Vohra, Anurag; Borga, Matteo; Posthuma, Niels; Kraker, Elke (2024) -
Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry
Meneghini, Matteo; Rossetto, Isabella; Borga, Matteo; Canato, Eleonora; De Santi, Carlo; Rampazzo, Fabiana; Meneghesso, Gaudenzio; Zanoni, Enrico; Stoffels, Steve; Van Hove, Marleen; Posthuma, Niels; Decoutere, Stefaan (2017) -
Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors
Mukherjee, Kalparupa; De Santi, Carlo; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo; You, Shuzhen; Geens, Karen; Borga, Matteo; Bakeroot, Benoit; Decoutere, Stefaan (2020) -
Demonstration of High-quality GaN Epitaxy on 200 mm Engineered Substrates for Vertical Power Device Fabrication
Geens, Karen; Herwig, Hahn; Liang, Hu; Borga, Matteo; Cingu, Deepthi; You, Shuzhen; Marx, Matthias; Oligschlaeger, Robert; Fahle, Dirk; Heuken, Michael; Odnoblyudov, Vladimir; Aktas, Ozgur; Basceri, Cem; Decoutere, Stefaan (2021) -
Development and analysis of thick GaN drift layers on 200 mm CTE-matched substrate for vertical device processing
Filho Goncalez, Walter; Borga, Matteo; Geens, Karen; Cingu, Deepthi; Chatterjee, Urmimala; Banerjee, Sourish; Vohra, Anurag; Han, Han; Minj, Albert; Hahn, Herwig; Marx, Matthias; Fahle, Dirk; Bakeroot, Benoit; Decoutere, Stefaan (2023) -
DLTS Study of Electrically Active Defects in semi-vertical GaN-on-Si FETs
Drobnŭ, Jakub; Marek, Juraj; Koza, A.; Vadovski, J.; Geens, Karen; Borga, Matteo; Liang, Hu; You, Shuzhen; Decoutere, Stefaan; Stuchlíková, Lubica (2020) -
Electrical and DLTS Characterization of Gate Interfaces in GaN-based Trench-gate semi-vertical MOS devices
Marek, Juraj; Mikoláek, Miroslav; Drobnŭ, Jakub; Kozarik, Jozef; Chvála, Ale; Geens, Karen; Borga, Matteo; Liang, Hu; You, Shuzhen; Decoutere, Stefaan; Stuchlíková, Lubica (2020) -
Evaluation of novel carrier substrates for high reliability and integrated GaN devices in a 200 mm complementary metal-oxide semiconductor compatible process
Stoffels, Steve; Geens, Karen; Li, Xiangdong; Wellekens, Dirk; You, Shuzhen; Zhao, Ming; Borga, Matteo; Zanoni, Enrico; Meneghesso, Gaudenzio; Meneghini, Matteo; Posthuma, Niels; Van Hove, Marleen; Decoutere, Stefaan (2018) -
Evidence of time-dependent vertical breakdown in GaN-on-Si HEMTs
Borga, Matteo; Meneghini, Matteo; Rossetto, Isabella; Stoffels, Steve; Posthuma, Niels; Van Hove, Marleen; Marcon, Denis; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico (2017) -
Exploration of gate trench module for vertical GaN devices
Ruzzarin, Maria; Geens, Karen; Borga, Matteo; Liang, Hu; You, Shuzhen; Bakeroot, Benoit; Decoutere, Stefaan; De Santi, Carlo; Neviani, Andrea; Meneghini, Matteo; Meneghesso, Gaudenzio; Zanoni, Enrico (2020) -
Gate module study for performance improvement in vertical GaN device
Ruzzarin, Maria; Geens, Karen; Borga, Matteo; Liang, Hu; You, Shuzhen; Bakeroot, Benoit; Decoutere, Stefaan; De Santi, Carlo; Meneghini, Matteo; Meneghesso, Gaudenzio; Zanoni, Enrico (2021) -
Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition
Millesimo, M.; Bakeroot, Benoit; Borga, Matteo; Posthuma, Niels; Decoutere, Stefaan; Sangiorgi, E.; Fiegna, C.; Tallarico, A. N. (2022)