Browsing by author "Borga, Matteo"
Now showing items 21-40 of 45
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High-Temperature Time-Dependent Gate Breakdown of p-GaN HEMTs
Millesimo, M.; Fiegna, C.; Tallarico, A. N.; Posthuma, Niels; Borga, Matteo; Bakeroot, Benoit; Decoutere, Stefaan (2021) -
Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors
Favero, D.; De Santi, C.; Mukherjee, K.; Borga, Matteo; Geens, Karen; Chatterjee, Urmimala; Bakeroot, Benoit; Decoutere, Stefaan; Rampazzo, F.; Meneghesso, G.; Zanoni, E.; Meneghini, M. (2022) -
Impact of Structural and Process Variations on the Time-Dependent OFF-State Breakdown of p-GaN Power HEMTs
Millesimo, M.; Tallarico, A. N.; Posthuma, Niels; Bakeroot, Benoit; Borga, Matteo; Decoutere, Stefaan (2021) -
Impact of substrate resistivity on the vertical leakage, breakdown, and trapping in GaN-on-Si E-Mode HEMTs
Borga, Matteo; Meneghini, Matteo; Stoffels, Steve; Li, Xiangdong; Posthuma, Niels; Van Hove, Marleen; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico (2018) -
Impact of the substrate and buffer design on the performance of GaN on Si
Borga, Matteo; Meneghini, Matteo; Stoffels, Steve; Van Hove, Marleen; Zhao, Ming; Li, Xiangdong; Decoutere, Stefaan; Zanoni, Enrico; Gaudenzio, Meneghesso (2018) -
Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs
Favero, D.; De Santi, C.; Mukherjee, K.; Geens, Karen; Borga, Matteo; Bakeroot, Benoit; You, Shuzhen; Decoutere, Stefaan; Meneghesso, G.; Zanoni, E.; Meneghini, M. (2022) -
Modeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devices
Borga, Matteo; Mukherjee, Kalparupa; De Santi, Carlo; Stoffels, Steve; Geens, Karen; You, Shuzhen; Bakeroot, Benoit; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo (2020) -
Modeling of the vertical leakage current in AlN/Si heterojunctions for GaN power applications
Borga, Matteo; De Santi, Carlo; Stoffels, Steve; Bakeroot, Benoit; Li, Xiangdong; Zhao, Ming; Decoutere, Stefaan; Meneghesso,, Gaudenzio; Meneghini, Matteo; Zanoni, Enrico (2020) -
Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability
Stoffels, Steve; Posthuma, Niels; Decoutere, Stefaan; Bakeroot, Benoit; Tallarico, Andrea Natale; Sangiorgi, Enrico; Fiegna, Claudio; Zheng, Jiaxin; Ma, X.; Borga, Matteo; Fabris, Elena; Meneghini, Matteo; Zanoni, Enrico; Meneghesso, Gaudenzio; Priesol, Juraj; Satka, Alexander (2019-04) -
Power GaN HEMT degradation: from time-dependent breakdown to hot-electron effects
Meneghini, Matteo; Barbato, A.; Borga, Matteo; De Santi, Carlos; Barbato, M.; Stoffels, Steve; Zhao, Ming; Posthuma, Niels; Decoutere, Stefaan; Haeberlen, Oliver; Detzel, Thomas; Meneghesso, Gaudenzio; Zanoni, Enrico (2018) -
Role of the GaN-on-Si Epi-Stack on ?R-ON Caused by Back-Gating Stress
Millesimo, M.; Borga, Matteo; Valentini, L.; Bakeroot, B.; Posthuma, Niels; Vohra, Anurag; Decoutere, Stefaan; Fiegna, C.; Tallarico, A. N. (2023) -
Route Toward Commercially Manufacturable Vertical GaN Devices
Geens, Karen; Borga, Matteo; Khan, Md Arif; Filho Goncalez, Walter; Vohra, Anurag; Banerjee, Sourish; Lee, Kwangjae; Chatterjee, Urmimala; Cingu, Deepthi; Bakeroot, Benoit; Decoutere, Stefaan (2024) -
Scaling of E-mode power GaN-HEMTs for low voltage/low Ron applications: Implications on robustness
Benato, Andrea; De Santi, Carlo; Borga, Matteo; Bakeroot, Benoit; Kuzma Filipek, Izabela; Posthuma, Niels; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo (2023) -
Study and characterization of GaN MOS capacitors: Planar vs trench topographies
Mukherjee, K.; De Santi, C.; You, Shuzhen; Geens, Karen; Borga, Matteo; Decoutere, Stefaan; Bakeroot, Benoit; Diehle, P.; Altmann, F.; Meneghesso, G.; Zanoni, E.; Meneghini, M. (2022) -
Study of emission and capture processes in semi-vertical GaN-on-Si trench-MOSFETs
Drobnŭ, Jakub; Marek, Juraj; Kosa, A.; Geens, Karen; Borga, Matteo; Liang, Hu; You, Shuzhen; Decoutere, Stefaan; Stuchlíková, Lubica (2021) -
TCAD Modeling of the Dynamic VTH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs
Tallarico, A. N.; Millesimo, M.; Bakeroot, Benoit; Borga, Matteo; Posthuma, Niels; Decoutere, Stefaan; Sangiorgi, E.; Fiegna, C. (2022) -
The 2018 GaN power electronics roadmap
Amano, H.; Baynes, Y.; Beam, E.; Borga, Matteo; Bouchet, T.; Chalker, Paul R.; Charles, M.; Chen, Kevin J.; Chowdhury, Nadim; Chu, Rongming; De Santi, Carlo; De Souza, Maria Merlyne; Decoutere, Stefaan; Di Cioccio, L.; Eckhardt, Bernd; Egawa, Takashi; Fay, P.; Freedsman, Joseph J.; Guido, L.; Haberlen, Oliver; Haynes, Geoff; Heckel, Thomas; Hemakumara, Dilini; Houston, Peter; Hu, Jie; Hua, Mengyuan; Huang, Qingyun; Huang, Alex; Jiang, Sheng; Kawai, H.; Kinzer, Dan; Kuball, Martin; Kumar, Ashwani; Lee, Kean Boon; Li, Xu; Marcon, Denis; März, Martin; McCarthy, R.; Meneghesso, Gaudenzio; Meneghini, Matteo; Morvan, E.; Nakajima, A.; Narayanan, E.M.S.; Oliver, Stephen; Palacios, Tomas; Piedra, Daniel; Plissonnier, M.; Reddy, R.; Sun, Min; Thayne, Iain; Torres, A.; Trivellin, Nicola; Unni, V.; Uren, Michael J.; Van Hove, Marleen; Wallis, David J.; Wang, J.; Xie, J.; Yagi, S.; Yang, Shu; Youtsey, C.; Yu, Ruiyang; Zanoni, Enrico; Zeltner, Stefan; Zhang, Yuhao (2018) -
The Role of Frequency and Duty Cycle on the Gate Reliability of p-GaN HEMTs
Millesimo, M.; Borga, Matteo; Bakeroot, Benoit; Posthuma, Niels; Decoutere, Stefaan; Sangiorgi, E.; Fiegna, C.; Tallarico, A. N. (2022) -
Threshold voltage variations in semi-vertical GaN-on-Si FETs: A comprehensive study
Mukherjee, Kalparupa; Borga, Matteo; Ruzzarin, Maria; Stoffels, Steve; Geens, Karen; Liang, Hu; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo (2019) -
Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p(+)n(-)n Diodes: The Road to Reliable Vertical MOSFETs
Mukherjee, Kalparupa; De Santi, Carlo; Buffolo, Matteo; Borga, Matteo; You, Shuzhen; Geens, Karen; Meneghini, Matteo; Bakeroot, Benoit; Decoutere, Stefaan; Gerosa, Andrea; Meneghesso, Gaudenzio; Zanoni, Enrico (2021)