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The Role of Frequency and Duty Cycle on the Gate Reliability of p-GaN HEMTs
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Authors
Millesimo, M.
;
Borga, Matteo
;
Bakeroot, Benoit
;
Posthuma, Niels
;
Decoutere, Stefaan
;
Sangiorgi, E.
;
Fiegna, C.
;
Tallarico, A. N.
DOI
10.1109/LED.2022.3206610
ISSN
0741-3106
Issue
11
Journal
IEEE ELECTRON DEVICE LETTERS
Volume
43
Title
The Role of Frequency and Duty Cycle on the Gate Reliability of p-GaN HEMTs
Publication type
Journal article
Embargo date
2022-11-30
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2
20.500.12860/40730.2
*
2022-11-25T09:55:41Z
validation by library/open access desk
1
20.500.12860/40730
2022-11-14T03:02:34Z
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