Browsing by author "Millesimo, M."
Now showing items 1-8 of 8
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Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate
Millesimo, M.; Fiegna, C.; Bakeroot, Benoit; Borga, Matteo; Posthuma, Niels; Decoutere, Stefaan; Sangiorgi, E.; Tallarico, A. N. (2024) -
Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition
Millesimo, M.; Bakeroot, Benoit; Borga, Matteo; Posthuma, Niels; Decoutere, Stefaan; Sangiorgi, E.; Fiegna, C.; Tallarico, A. N. (2022) -
High-Temperature Time-Dependent Gate Breakdown of p-GaN HEMTs
Millesimo, M.; Fiegna, C.; Tallarico, A. N.; Posthuma, Niels; Borga, Matteo; Bakeroot, Benoit; Decoutere, Stefaan (2021) -
Impact of Structural and Process Variations on the Time-Dependent OFF-State Breakdown of p-GaN Power HEMTs
Millesimo, M.; Tallarico, A. N.; Posthuma, Niels; Bakeroot, Benoit; Borga, Matteo; Decoutere, Stefaan (2021) -
P-GaN Gate HEMTs: A Solution to Improve the High-Temperature Gate Lifetime
Tallarico, A. N.; Millesimo, M.; Borga, Matteo; Bakeroot, Benoit; Posthuma, Niels; Cosnier, T.; Decoutere, Stefaan; Sangiorgi, E.; Fiegna, C. (2024) -
Role of the GaN-on-Si Epi-Stack on ?R-ON Caused by Back-Gating Stress
Millesimo, M.; Borga, Matteo; Valentini, L.; Bakeroot, B.; Posthuma, Niels; Vohra, Anurag; Decoutere, Stefaan; Fiegna, C.; Tallarico, A. N. (2023) -
TCAD Modeling of the Dynamic VTH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs
Tallarico, A. N.; Millesimo, M.; Bakeroot, Benoit; Borga, Matteo; Posthuma, Niels; Decoutere, Stefaan; Sangiorgi, E.; Fiegna, C. (2022) -
The Role of Frequency and Duty Cycle on the Gate Reliability of p-GaN HEMTs
Millesimo, M.; Borga, Matteo; Bakeroot, Benoit; Posthuma, Niels; Decoutere, Stefaan; Sangiorgi, E.; Fiegna, C.; Tallarico, A. N. (2022)