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Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors
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Authors
Favero, D.
;
De Santi, C.
;
Mukherjee, K.
;
Borga, Matteo
;
Geens, Karen
;
Chatterjee, Urmimala
;
Bakeroot, Benoit
;
Decoutere, Stefaan
;
Rampazzo, F.
;
Meneghesso, G.
;
Zanoni, E.
;
Meneghini, M.
DOI
10.1016/j.microrel.2022.114620
ISSN
0026-2714
Issue
November
Journal
MICROELECTRONICS RELIABILITY
Volume
138
Title
Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors
Publication type
Journal article
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2
20.500.12860/40950.2
*
2023-05-25T12:49:47Z
validation by library/open access desk
1
20.500.12860/40950
2023-01-09T03:12:32Z
*Selected version
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