Browsing by author "De Santi, C."
Now showing items 1-6 of 6
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Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs
Modolo, N.; Fregolent, M.; Masin, F.; Benato, A.; Bettini, A.; Buffolo, M.; De Santi, C.; Borga, Matteo; Posthuma, Niels; Bakeroot, Benoit; Decoutere, Stefaan; Vogrig, D.; Neviani, A.; Meneghesso, G.; Zanoni, E.; Meneghini, M. (2022) -
Compact Modeling of Nonideal Trapping/Detrapping Processes in GaN Power Devices
Modolo, N.; De Santi, C.; Baratella, Giulio; Bettini, A.; Borga, Matteo; Posthuma, Niels; Bakeroot, Benoit; You, Shuzhen; Decoutere, Stefaan; Bevilaqua, A.; Neviani, A.; Meneghesso, G.; Zanoni, E.; Meneghini, M. (2022) -
High-Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps
Favero, D.; Cavaliere, A.; De Santi, C.; Borga, Matteo; Filho Goncalez, Walter; Geens, Karen; Bakeroot, Benoit; Decoutere, Stefaan; Meneghesso, G.; Zanoni, E.; Meneghini, M. (2023) -
Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors
Favero, D.; De Santi, C.; Mukherjee, K.; Borga, Matteo; Geens, Karen; Chatterjee, Urmimala; Bakeroot, Benoit; Decoutere, Stefaan; Rampazzo, F.; Meneghesso, G.; Zanoni, E.; Meneghini, M. (2022) -
Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs
Favero, D.; De Santi, C.; Mukherjee, K.; Geens, Karen; Borga, Matteo; Bakeroot, Benoit; You, Shuzhen; Decoutere, Stefaan; Meneghesso, G.; Zanoni, E.; Meneghini, M. (2022) -
Study and characterization of GaN MOS capacitors: Planar vs trench topographies
Mukherjee, K.; De Santi, C.; You, Shuzhen; Geens, Karen; Borga, Matteo; Decoutere, Stefaan; Bakeroot, Benoit; Diehle, P.; Altmann, F.; Meneghesso, G.; Zanoni, E.; Meneghini, M. (2022)