Browsing by author "Geens, Karen"
Now showing items 1-20 of 84
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1.2 kV Enhancement-Mode p-GaN Gate HEMTs on 200 mm Engineered Substrates
Kumar, Sujit; Geens, Karen; Vohra, Anurag; Wellekens, Dirk; Cingu, Deepthi; Fabris, Elena; Cosnier, Thibault; Hahn, H.; Bakeroot, Benoit; Posthuma, Niels; Langer, Robert; Decoutere, Stefaan (2024) -
200 V enhancement-mode p-GaN HEMTs fabricated on 200 mm GaN-on-SOI with trench isolation for monolithic integration
Li, Xiangdong; Van Hove, Marleen; Zhao, Ming; Geens, Karen; Lempinen, Vesa-Pekka; Sormunen, Jaakko; Stoffels, Steve; Groeseneken, Guido; Decoutere, Stefaan (2017) -
200 V enhancement-mode p-GaN HEMTs fabricated on 200 mm GaN-on-SOI with trench isolation for monolithic integration
Li, Xiangdong; Van Hove, Marleen; Zhao, Ming; Geens, Karen; Lempinen, Vesa-Pekka; Sormunen, Jaakko; Groeseneken, Guido; Decoutere, Stefaan (2017) -
200 V GaN-on-SOI Smart Power Platform for Monolithic GaN Power ICs
Cosnier, Thibault; Syshchyk, Olga; De Jaeger, Brice; Geens, Karen; Cingu, Deepthi; Fabris, Elena; Borga, Matteo; Vohra, Anurag; Zhao, Ming; Bakeroot, Benoit; Wellekens, Dirk; Magnani, Alessandro; Vudumula, Pavan; Chatterjee, Urmimala; Langer, Robert; Decoutere, Stefaan (2021) -
2kV breakdown voltage GaN-on-Si DHFETs with sub-micron thick AlGaN Buffer
Srivastava, Puneet; Cheng, Kai; Das, Jo; Van Hove, Marleen; Leys, Maarten; Marcon, Denis; Visalli, Domenica; Geens, Karen; Decoutere, Stefaan; Mertens, Robert; Borghs, Gustaaf (2012) -
650 V p-GaN gate power HEMTs on 200 mm engineered substrates
Geens, Karen; Li, Xiangdong; Zhao, Ming; Guo, Weiming; Wellekens, Dirk; Posthuma, Niels; Fahle, Dirk; Aktas, Ozgur; Odnoblyudov, Vlad; Decoutere, Stefaan (2019) -
A comprehensive study of MOVPE growth on 200 mm GaN-on-SOI for monolithic integrated GaN ICs
Zhao, Ming; Geens, Karen; Li, Xiangdong; Amirifar, Nooshin; Decoutere, Stefaan (2021) -
AlGaN/GaN/AlGaN double heterostructures grown on 200 mm silicon(111) substrates with high electron mobility
Cheng, Kai; Liang, Hu; Van Hove, Marleen; Geens, Karen; De Jaeger, Brice; Srivastava, Puneet; Kang, Xuanwu; Favia, Paola; Bender, Hugo; Decoutere, Stefaan; Dekoster, Johan; del Agua Borniquel, Jose Ignacio; Jun, Sung Won; Chung, Hua (2012) -
AlON gate dielectric and gate trench cleaning for improved relia-bility of vertical GaN MOSFET
Filho Goncalez, Walter; Borga, Matteo; Geens, Karen; Cingu, Deepthi; Chatterjee, Urmimala; You, Shuzhen; Bakeroot, Benoit; Decoutere, Stefaan; Knaepen, Werner; Arnou, Panagiota; Homm, Pia (2022) -
An industry-ready 200 mm p-GaN E-mode GaN-on-Si power technology
Posthuma, Niels; You, Shuzhen; Stoffels, Steve; Wellekens, Dirk; Liang, Hu; Zhao, Ming; De Jaeger, Brice; Geens, Karen; Ronchi, Nicolo; Decoutere, Stefaan; Moens, Peter; Banerjee, Abhishek; Ziad, Hocine; Tack, Marnix (2018) -
Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs
Mukherjee, Kalparupa; Borga, Matteo; Ruzzarin, Maria; De Santi, Carlo; Stoffels, Steve; You, Shuzhen; Geens, Karen; Liang, Hu; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo (2020) -
Au-free CMOS-compatible AlGaN/GaN HEMT processing on 200 mm Si substrates
De Jaeger, Brice; Van Hove, Marleen; Wellekens, Dirk; Kang, Xuanwu; Liang, Hu; Mannaert, Geert; Geens, Karen; Decoutere, Stefaan (2012) -
Au-free, high-breakdown AlGaN/GaN MISHEMTs with low leakage, high yield and robust TDDB characteristics
Lenci, Silvia; Kang, Xuanwu; Wellekens, Dirk; Van Hove, Marleen; Boulay, Sanae; Stoffels, Steve; Geens, Karen; Zahid, Mohammed; Decoutere, Stefaan (2012) -
Buffer vertical leakage mechanism and reliability of 200-mm GaN-on-SOI
Li, Xiangdong; Zhao, Ming; Bakeroot, Benoit; Geens, Karen; Guo, Weiming; Lempinen, Vesa-Pekka; Sormunen, Jaakko; Groeseneken, Guido; Decoutere, Stefaan (2019) -
Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization
Mukherjee, Kalparupa; De Santi, Carlo; Borga, Matteo; Geens, Karen; You, Shuzhen; Bakeroot, Benoit; Decoutere, Stefaan; Diehle, Patrick; Huebner, Susanne; Altmann, Frank; Buffolo, Matteo; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo (2021) -
Characterization of defect states in Mg-doped GaN-on-Si p+n diodes using Deep-Level Transient Fourier Spectroscopy
Lechaux, Yoann; Minj, Albert; Mechin, Laurence; Liang, Hu; Geens, Karen; Zhao, Ming; Simoen, Eddy; Guillet, Bruno (2020) -
CMOS process-compatible 200mm polycrystalline AlN substrates for GaN power transistors
Geens, Karen; Van Hove, Marleen; Li, Xiangdong; Zhao, Ming; Šatka, Alexander; Vincze, Andrej; Decoutere, Stefaan (2017) -
CMOS-compatible high-power low-leakage AlGaN/GaN MISHEMT on silicon substrate
Van Hove, Marleen; Boulay, Sanae; Bahl, Sandeep; Stoffels, Steve; Kang, Xuanwu; Wellekens, Dirk; Geens, Karen; Delabie, Annelies; Decoutere, Stefaan (2012) -
Correlating Structural and Electrical Characteristics of Threading Dislocations in GaN-on-Si Heterostructures and p-n Diodes by Multiple Microscopy Techniques
Minj, Albert; Geens, Karen; Liang, Hu; Han, Han; Noel, Celine; Bakeroot, Benoit; Paredis, Kristof; Zhao, Ming; Hantschel, Thomas; Decoutere, Stefaan (2023) -
Coupled electro-thermal model for simulation of GaN power switching HEMTs in circuit simulators
Stoffels, Steve; Oprins, Herman; Marcon, Denis; Geens, Karen; Kang, Xuanwu; Van Hove, Marleen; Decoutere, Stefaan (2012)