Browsing by author "Meneghini, M."
Now showing items 1-16 of 16
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A novel degradation mechanism of AlGaN/GaN/Silicon heterostructures related to the generation of interface traps
Meneghini, M.; Bertin, M.; Dal Santo, G.; Stocco, A.; Chini, A.; Marcon, Denis; Malinowski, Pawel; Mura, G.; Musu, E.; Vanzi, M.; Meneghesso, G.; Zanoni, E. (2012) -
Analysis of off-state leakage mechanisms in GaN-based MIS-HEMTs: experimental data and numerical simulation
Marino, F.A.; Bisi, D.; Meneghini, M.; Verzellesi, G.; Zanoni, E.; Van Hove, Marleen; You, Shuzhen; Decoutere, Stefaan; Marcon, Denis; Stoffels, Steve; Ronchi, Nicolo; Meneghesso, G. (2015) -
Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs
Modolo, N.; Fregolent, M.; Masin, F.; Benato, A.; Bettini, A.; Buffolo, M.; De Santi, C.; Borga, Matteo; Posthuma, Niels; Bakeroot, Benoit; Decoutere, Stefaan; Vogrig, D.; Neviani, A.; Meneghesso, G.; Zanoni, E.; Meneghini, M. (2022) -
Compact Modeling of Nonideal Trapping/Detrapping Processes in GaN Power Devices
Modolo, N.; De Santi, C.; Baratella, Giulio; Bettini, A.; Borga, Matteo; Posthuma, Niels; Bakeroot, Benoit; You, Shuzhen; Decoutere, Stefaan; Bevilaqua, A.; Neviani, A.; Meneghesso, G.; Zanoni, E.; Meneghini, M. (2022) -
Dynamic-ron control via proton irradiation in AlGaN/GaN transistors
Tajalli, A.; Stockman, Arno; Meneghini, M.; Mouhoubi, S.; Banerjee, A.; Gerardin, S.; Bagatin, M.; Paccagnella, A.; Zanoni, E.; Tack, M.; Bakeroot, Benoit; Moens, P.; Meneghesso, G. (2018) -
ESD-failure of E-mode GaN HEMTs: role of device geometry and charge trapping
Canato, E; Meneghini, M.; Nardo, A.; Masin, F.; Barbato, F.; Barbato, M.; Stockman, Arno; Banerjee, A.; Moens, P.; Zanoni, E.; Meneghesso, G. (2019) -
High-Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps
Favero, D.; Cavaliere, A.; De Santi, C.; Borga, Matteo; Filho Goncalez, Walter; Geens, Karen; Bakeroot, Benoit; Decoutere, Stefaan; Meneghesso, G.; Zanoni, E.; Meneghini, M. (2023) -
Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors
Favero, D.; De Santi, C.; Mukherjee, K.; Borga, Matteo; Geens, Karen; Chatterjee, Urmimala; Bakeroot, Benoit; Decoutere, Stefaan; Rampazzo, F.; Meneghesso, G.; Zanoni, E.; Meneghini, M. (2022) -
Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors
Tajalli, A.; Canato, E.; Nardo, A.; Meneghini, M.; Stockman, Arno; Moens, P.; Zanoni, E.; Meneghesso, G. (2019) -
Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs
Favero, D.; De Santi, C.; Mukherjee, K.; Geens, Karen; Borga, Matteo; Bakeroot, Benoit; You, Shuzhen; Decoutere, Stefaan; Meneghesso, G.; Zanoni, E.; Meneghini, M. (2022) -
IV, noise and electroluminescence analysis of stress-induced percolation paths in AlGaN/GaN high electron mobility transistors
Marko, P.; Meneghini, M.; Bychikhin, S.; Marcon, Denis; Meneghesso, G.; Zanoni, E.; Pogany, D. (2012) -
On the origin of the leakage current in p-gate AlGaN/GaN HEMTs
Stockman, Arno; Canato, E.; Tajalli, A.; Meneghini, M.; Meneghesso, G.; Zanoni, E.; Moens, P.; Bakeroot, Benoit (2018) -
Reverse-bias degradation of AlGaN/GaN vertical Schottky diodes: an investigation based on electrical and capacitive measurements
Meneghini, M.; Bertin, M.; Dal Santo, G.; Stocco, A.; Bisi, D.; Marcon, Denis; Malinowski, Pawel; Chini, A.; Menghesso, G.; Zanoni, E. (2012) -
Study and characterization of GaN MOS capacitors: Planar vs trench topographies
Mukherjee, K.; De Santi, C.; You, Shuzhen; Geens, Karen; Borga, Matteo; Decoutere, Stefaan; Bakeroot, Benoit; Diehle, P.; Altmann, F.; Meneghesso, G.; Zanoni, E.; Meneghini, M. (2022) -
Vertical stack reliability of GaN-on-Si buffers for low-voltage applications
Meneghini, M.; Meneghesso, G.; Zanoni, E.; Fabris, Elena; Borga, Matteo; Posthuma, Niels; Zhao, Ming; De Jaeger, Brice; You, Shuzhen; Decoutere, Stefaan (2021) -
μs-Range evaluation of threshold voltage instabilities of GaN-on-Si HEMTs with p-GaN gate
Canato, E.; Masin, F.; Borga, M.; Zanoni, E.; Meneghini, M.; Meneghesso, G.; Stockman, Arno; Banerjee, A.; Moens, P. (2019)