ESD-failure of E-mode GaN HEMTs: role of device geometry and charge trapping

Canato, E; Meneghini, M.; Nardo, A.; Masin, F.; Barbato, F.; Barbato, M.; Stockman, Arno; Banerjee, A.; Moens, P.; Zanoni, E.; Meneghesso, G.

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ESD-failure of E-mode GaN HEMTs: role of device geometry and charge trapping

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2019

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Microelectronics Reliability

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1987 since deposited on 2021-10-27

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Acq. date: 2026-09-11

ESD-failure of E-mode GaN HEMTs: role of device geometry and charge trapping

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