Browsing by author "Zanoni, E."

A novel degradation mechanism of AlGaN/GaN/Silicon heterostructures related to the generation of interface traps

Meneghini, M.; Bertin, M.; Dal Santo, G.; Stocco, A.; Chini, A.; Marcon, Denis; Malinowski, Pawel; Mura, G.; Musu, E.; Vanzi, M.; Meneghesso, G.; Zanoni, E. (2012)

Analysis of off-state leakage mechanisms in GaN-based MIS-HEMTs: experimental data and numerical simulation

Marino, F.A.; Bisi, D.; Meneghini, M.; Verzellesi, G.; Zanoni, E.; Van Hove, Marleen; You, Shuzhen; Decoutere, Stefaan; Marcon, Denis; Stoffels, Steve; Ronchi, Nicolo; Meneghesso, G. (2015)

Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs

Modolo, N.; Fregolent, M.; Masin, F.; Benato, A.; Bettini, A.; Buffolo, M.; De Santi, C.; Borga, Matteo; Posthuma, Niels; Bakeroot, Benoit; Decoutere, Stefaan; Vogrig, D.; Neviani, A.; Meneghesso, G.; Zanoni, E.; Meneghini, M. (2022)

Compact Modeling of Nonideal Trapping/Detrapping Processes in GaN Power Devices

Modolo, N.; De Santi, C.; Baratella, Giulio; Bettini, A.; Borga, Matteo; Posthuma, Niels; Bakeroot, Benoit; You, Shuzhen; Decoutere, Stefaan; Bevilaqua, A.; Neviani, A.; Meneghesso, G.; Zanoni, E.; Meneghini, M. (2022)

Dynamic-ron control via proton irradiation in AlGaN/GaN transistors

Tajalli, A.; Stockman, Arno; Meneghini, M.; Mouhoubi, S.; Banerjee, A.; Gerardin, S.; Bagatin, M.; Paccagnella, A.; Zanoni, E.; Tack, M.; Bakeroot, Benoit; Moens, P.; Meneghesso, G. (2018)

ESD-failure of E-mode GaN HEMTs: role of device geometry and charge trapping

Canato, E; Meneghini, M.; Nardo, A.; Masin, F.; Barbato, F.; Barbato, M.; Stockman, Arno; Banerjee, A.; Moens, P.; Zanoni, E.; Meneghesso, G. (2019)

High-Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps

Favero, D.; Cavaliere, A.; De Santi, C.; Borga, Matteo; Filho Goncalez, Walter; Geens, Karen; Bakeroot, Benoit; Decoutere, Stefaan; Meneghesso, G.; Zanoni, E.; Meneghini, M. (2023)

Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors

Favero, D.; De Santi, C.; Mukherjee, K.; Borga, Matteo; Geens, Karen; Chatterjee, Urmimala; Bakeroot, Benoit; Decoutere, Stefaan; Rampazzo, F.; Meneghesso, G.; Zanoni, E.; Meneghini, M. (2022)

Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors

Tajalli, A.; Canato, E.; Nardo, A.; Meneghini, M.; Stockman, Arno; Moens, P.; Zanoni, E.; Meneghesso, G. (2019)

Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs

Favero, D.; De Santi, C.; Mukherjee, K.; Geens, Karen; Borga, Matteo; Bakeroot, Benoit; You, Shuzhen; Decoutere, Stefaan; Meneghesso, G.; Zanoni, E.; Meneghini, M. (2022)

IV, noise and electroluminescence analysis of stress-induced percolation paths in AlGaN/GaN high electron mobility transistors

Marko, P.; Meneghini, M.; Bychikhin, S.; Marcon, Denis; Meneghesso, G.; Zanoni, E.; Pogany, D. (2012)

On the origin of the leakage current in p-gate AlGaN/GaN HEMTs

Stockman, Arno; Canato, E.; Tajalli, A.; Meneghini, M.; Meneghesso, G.; Zanoni, E.; Moens, P.; Bakeroot, Benoit (2018)

Reverse-bias degradation of AlGaN/GaN vertical Schottky diodes: an investigation based on electrical and capacitive measurements

Meneghini, M.; Bertin, M.; Dal Santo, G.; Stocco, A.; Bisi, D.; Marcon, Denis; Malinowski, Pawel; Chini, A.; Menghesso, G.; Zanoni, E. (2012)