Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors

Favero, D.; De Santi, C.; Mukherjee, K.; Borga, Matteo; Geens, Karen; Chatterjee, Urmimala; Bakeroot, Benoit; Decoutere, Stefaan; Rampazzo, F.; Meneghesso, G.; Zanoni, E.; Meneghini, M.

doi:10.1016/j.microrel.2022.114620

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Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors

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2022

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https://doi.org/10.1016/j.microrel.2022.114620

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MICROELECTRONICS RELIABILITY

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1231 since deposited on 2023-01-09

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Acq. date: 2025-12-11

Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors

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