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Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors
Publication:
Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors
Date
2022
Journal article
https://doi.org/10.1016/j.microrel.2022.114620
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Favero, D.
;
De Santi, C.
;
Mukherjee, K.
;
Borga, Matteo
;
Geens, Karen
;
Chatterjee, Urmimala
;
Bakeroot, Benoit
;
Decoutere, Stefaan
;
Rampazzo, F.
;
Meneghesso, G.
;
Zanoni, E.
;
Meneghini, M.
Journal
MICROELECTRONICS RELIABILITY
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1229
since deposited on 2023-01-09
Acq. date: 2025-10-23
Citations
Metrics
Views
1229
since deposited on 2023-01-09
Acq. date: 2025-10-23
Citations