Publication:
Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors
| dc.contributor.author | Favero, D. | |
| dc.contributor.author | De Santi, C. | |
| dc.contributor.author | Mukherjee, K. | |
| dc.contributor.author | Borga, Matteo | |
| dc.contributor.author | Geens, Karen | |
| dc.contributor.author | Chatterjee, Urmimala | |
| dc.contributor.author | Bakeroot, Benoit | |
| dc.contributor.author | Decoutere, Stefaan | |
| dc.contributor.author | Rampazzo, F. | |
| dc.contributor.author | Meneghesso, G. | |
| dc.contributor.author | Zanoni, E. | |
| dc.contributor.author | Meneghini, M. | |
| dc.contributor.imecauthor | Borga, Matteo | |
| dc.contributor.imecauthor | Geens, Karen | |
| dc.contributor.imecauthor | Bakeroot, Benoit | |
| dc.contributor.imecauthor | Decoutere, Stefaan | |
| dc.contributor.orcidimec | Borga, Matteo::0000-0003-3087-6612 | |
| dc.contributor.orcidimec | Geens, Karen::0000-0003-1815-3972 | |
| dc.contributor.orcidimec | Bakeroot, Benoit::0000-0003-4392-1777 | |
| dc.contributor.orcidimec | Decoutere, Stefaan::0000-0001-6632-6239 | |
| dc.date.accessioned | 2023-05-25T12:51:53Z | |
| dc.date.available | 2023-01-09T03:12:32Z | |
| dc.date.available | 2023-05-25T12:51:53Z | |
| dc.date.issued | 2022 | |
| dc.description.wosFundingText | This work was carried out within the UltimateGaN project, that has received funding from the ECSEL Joint Undertaking (JU) under grant agreement No 826392. The JU receives support from the European Union's Horizon 2020 research and innovation programme and Austria, Belgium, Germany, Italy, Slovakia, Spain, Sweden, Norway, Switzerland. The UltimateGaN project is co-funded by the Ministry of Education, Universities and Research in Italy. | |
| dc.identifier.doi | 10.1016/j.microrel.2022.114620 | |
| dc.identifier.issn | 0026-2714 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/40950 | |
| dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | |
| dc.source.beginpage | Art. 114620 | |
| dc.source.endpage | na | |
| dc.source.issue | November | |
| dc.source.journal | MICROELECTRONICS RELIABILITY | |
| dc.source.numberofpages | 4 | |
| dc.source.volume | 138 | |
| dc.title | Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
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