Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p(+)n(-)n Diodes: The Road to Reliable Vertical MOSFETs

Mukherjee, Kalparupa; De Santi, Carlo; Buffolo, Matteo; Borga, Matteo; You, Shuzhen; Geens, Karen; Meneghini, Matteo; Bakeroot, Benoit; Decoutere, Stefaan; Gerosa, Andrea; Meneghesso, Gaudenzio; Zanoni, Enrico

doi:10.3390/mi12040445

Publication:

Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p(+)n(-)n Diodes: The Road to Reliable Vertical MOSFETs

Date

2021

Journal article

https://doi.org/10.3390/mi12040445

Simple item page Full metadata Statistics

Files

Published version 4.5 MB

Author(s)

;

;

;

;

;

;

;

;

;

;

Meneghesso, Gaudenzio

;

Zanoni, Enrico

Journal

MICROMACHINES

Statistics

811 since deposited on 2022-02-18

45last month

17last week

Acq. date: 2026-10-04

1890 since deposited on 2022-02-18

3last month

1last week

Acq. date: 2026-10-04

Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p(+)n(-)n Diodes: The Road to Reliable Vertical MOSFETs

Date

Files

Author(s)

Journal

Abstract

Description

Statistics

Downloads

Views

Citations

Statistics

Downloads

Views

Citations