Publication:

Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p(+)n(-)n Diodes: The Road to Reliable Vertical MOSFETs

Date

2021
Journal article
https://doi.org/10.3390/mi12040445
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dc.contributor.authorMukherjee, Kalparupa
dc.contributor.authorDe Santi, Carlo
dc.contributor.authorBuffolo, Matteo
dc.contributor.authorBorga, Matteo
dc.contributor.authorYou, Shuzhen
dc.contributor.authorGeens, Karen
dc.contributor.authorMeneghini, Matteo
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorGerosa, Andrea
dc.contributor.authorMeneghesso, Gaudenzio
dc.contributor.authorZanoni, Enrico
dc.contributor.imecauthorBorga, Matteo
dc.contributor.imecauthorYou, Shuzhen
dc.contributor.imecauthorGeens, Karen
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.orcidextDe Santi, Carlo::0000-0001-6064-077X
dc.contributor.orcidextBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidextGerosa, Andrea::0000-0002-3395-8034
dc.contributor.orcidextMeneghesso, Gaudenzio::0000-0002-6715-4827
dc.contributor.orcidimecGeens, Karen::0000-0003-1815-3972
dc.contributor.orcidimecBorga, Matteo::0000-0003-3087-6612
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.date.accessioned2022-02-18T13:06:55Z
dc.date.available2022-02-18T13:06:55Z
dc.date.issued2021
dc.identifier.doi10.3390/mi12040445
dc.identifier.issn2072-666X
dc.identifier.pmidMEDLINE:33923422
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/38885
dc.publisherMDPI
dc.source.beginpage445
dc.source.issue4
dc.source.journalMICROMACHINES
dc.source.numberofpages11
dc.source.volume12
dc.title

Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p(+)n(-)n Diodes: The Road to Reliable Vertical MOSFETs

dc.typeJournal article
dspace.entity.typePublication
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