Browsing by author "El Kazzi, Salim"

2D materials integration: The long journey from a lab-to-fab

El Kazzi, Salim (2018)

2D materials: roadmap to CMOS integration

Huyghebaert, Cedric; Schram, Tom; Smets, Quentin; Agarwal Kumar, Tarun; Verreck, Devin; Brems, Steven; Phommahaxay, Alain; Chiappe, Daniele; El Kazzi, Salim; Lockhart de la Rosa, Cesar Javier; Arutchelvan, Goutham; Cott, Daire; Ludwig, Jonathan; Gaur, Abhinav; Sutar, Surajit; Leonhardt, Alessandra; Marinov, Daniil; Lin, Dennis; Caymax, Matty; Asselberghs, Inge; Pourtois, Geoffrey; Radu, Iuliana (2018)

Band-to-band tunneling MOSCAPs for rapid TFET characterization

Smets, Quentin; Verhulst, Anne; Lin, Dennis; Verreck, Devin; Merckling, Clement; El Kazzi, Salim; Martens, Koen; Raskin, Jean-Pierre; Thean, Aaron; Heyns, Marc (2014)

Built-in sheet charge as an alternative to dopant pockets in tunnel field-effect transistors

Verreck, Devin; Verhulst, Anne; Xiang, Yang; Yakimets, Dmitry; El Kazzi, Salim; Parvais, Bertrand; Groeseneken, Guido; Collaert, Nadine; Mocuta, Anda (2018)

Calibration of the effective tunneling bandgap in GaAsSb/InGaAs for improved TFET performance prediction

Smets, Quentin; Verhulst, Anne; El Kazzi, Salim; Gundlach, David; Richter, Curt; Mocuta, Anda; Collaert, Nadine; Thean, Aaron; Heyns, Marc (2016)

Careful stoichiometry monitoring and doping control during the tunneling interface growth of an n + InAs(Si)/p + GaSb(Si) Esaki diode

El Kazzi, Salim; Alian, AliReza; Hsu, Brent; Verhulst, Anne; Walke, Amey; Favia, Paola; Douhard, Bastien; del Alamo, Jesus Del Alamo; Lu, Wenjie; Collaert, Nadine; Merckling, Clement (2018)

Covalent functionalization of molybdenum disulfide by chemically activated diazonium salts

Daukiya, Lakshya; Teyssandier, Joan; Eyley, Samuel; El Kazzi, Salim; Gonzalez, Miriam Candelaria Rodriguez; Pradhan, Bapi; Thielemans, Wim; Hofkens, Johan; De Feyter, Steven (2021)

Deep levels in Metal-Oxide-Semiconductor Capacitors Fabricated on n-type In0.53Ga0.47As Lattice Matched to InP Substrates

Simoen, Eddy; Hsu, Brent; Alian, AliReza; El Kazzi, Salim; Wang, Chong; Ori, Hiroyuki (2019)

Demonstration of direction dependent conduction through MoS2 films prepared by tunable mass transport fabrication

Chiappe, Daniele; Mongillo, Massimo; Asselberghs, Inge; El Kazzi, Salim; Caymax, Matty; Barla, Kathy; De Gendt, Stefan; Radu, Iuliana; Huyghebaert, Cedric (2016)

Diffraction studies for stoichiometry effects in BaTiO3 grown by molecular beam epitaxy on Ge(001)

Hsu, Mark; Merckling, Clement; El Kazzi, Salim; Pantouvaki, Marianna; Richard, Olivier; Bender, Hugo; Meersschaut, Johan; Van Campenhout, Joris; Absil, Philippe; Van Thourhout, Dries (2016)

Dislocations behavior in highly mismatched III-Sb growth and their impact on the fabrication of top-down n+InAs/p+GaSb NW tunneling devices

El Kazzi, Salim; Alian, AliReza; Hsu, Brent; Favia, Paola; Merckling, Clement; Lu, Wenjie; Del Alamo, Jesus; Collaert, Nadine (2018-11)

Epitaxial registry and crystallinity of MoS2 via molecular beam and metalorganic vapor phase van der Waals epitaxy

Mortelmans, Wouter; El Kazzi, Salim; Groven, Benjamin; Nalin Mehta, Ankit; Balaji, Yashwanth; De Gendt, Stefan; Heyns, Marc; Merckling, Clement (2020)

Extracting the effective bandgap of heterojunctions using Esaki diode I-V meaurements

Smets, Quentin; Verhulst, Anne; El Kazzi, Salim; Verreck, Devin; Richard, Olivier; Bender, Hugo; Collaert, Nadine; Mocuta, Anda; Thean, Aaron; Heyns, Marc (2015)

Forcing epitaxial relationships between GS-MBE MX2 grown layers and commercial substrates

El Kazzi, Salim; Mortelmans, Wouter; Nuytten, Thomas; Radu, Iuliana; Merckling, Clement (2017)

Fundamental limitation of van der Waals homoepitaxy by stacking fault formation in WSe2

Mortelmans, Wouter; Nalin Mehta, Ankit; Balaji, Yashwanth; El Kazzi, Salim; Sergeant, Stefanie; Houssa, Michel; De Gendt, Stefan; Heyns, Marc; Merckling, Clement (2020)

High mobility In0.53Ga0.47As MOSFETs with steep sub-threshold slope achieved by remote reduction of native III-V oxides with metal electrodes

Yoshida, Shinichi; Lin, Dennis; Vais, Abhitosh; Alian, AliReza; Franco, Jacopo; El Kazzi, Salim; Mols, Yves; Miyanami, Yuki; Nakazawa, M.; Collaert, Nadine; Watanabe, H.; Thean, Aaron (2017)

Impact of field-induced quantum confinement on the onset of tunneling field-effect transistors: Experimental verification

Smets, Quentin; Verhulst, Anne; Martens, Koen; Lin, Dennis; El Kazzi, Salim; Verreck, Devin; Simoen, Eddy; Collaert, Nadine; Thean, Aaron; Raskin, Jean-Pierre; Heyns, Marc (2014)