Browsing by author "Martin, D."
Now showing items 1-4 of 4
-
Ferroelectricity in doped hafnium oxide
Schroeder, Uwe; Yurchuk, E.; Müller, Johannes; Martin, D.; Schenk, T.; Adelmann, Christoph; Kalinin, S.; Böttger, U.; Kersch, A.; Mikolajick, Thomas (2014) -
Hafnium oxide based CMOS compatible ferroelectric materials
Schroeder, Uwe; Martin, D.; Mueller, J.; Yurchuk, E.; Mueller, S.; Adelmann, Christoph; Schloesser, T.; van Bentum, R.; Mikolajick, Thomas (2012) -
Non-volatile data storage in 28nm ferroelectric FETs
Schroeder, U.; Mueller, J.; Yurchuk, E.; Mueller, S.; Martin, D.; Adelmann, Christoph; Mikolajick, T. (2012) -
Searching for the origin of the ferroelectric phase in HfO2
Schroeder, Uwe; Schenk, T.; Richter, C.; Hoffmann, M.; Martin, D.; Shimizu, T.; Funakubo, H.; Pohl, D.; Adelmann, Christoph; Materlik, R.; Kersch, A.; Sang, X.; LeBeau, J.; Kalinin, S.; Mikolajick, T. (2015)