Browsing by author "Raghavan, N."

Now showing items 1-2 of 2

New understanding of dielectric breakdown in advanced FinFET devices – physical, electrical, statistical and multiphysics study

Mei, S; Bosman, M.; Raghavan, N.; Linten, Dimitri; Groeseneken, Guido; Horiguchi, Naoto; Pey, K.L. (2016)
Threshold shift observed in resistive switching in metal-oxide-semiconductor transistors and the effect of forming gas anneal

Liu, W.H.; Pey, K.L.; Wu, X.; Raghavan, N.; Padovani, A.; Larcher, L.; Vandelli, L.; Bosman, M.; Kauerauf, Thomas (2011)