Browsing by author "Ogawa, Masaki"
Now showing items 1-7 of 7
-
Defect control for Ge/Si and Ge1-xSnx/Ge/Si heterostructures
Sakai, Akira; Takeuchi, Shotaro; Nakatsuka, Osamu; Ogawa, Masaki; Zaima, Shigeaki (2007) -
Growth of highly strain-relaxed Ge1-xSnx/virtual Ge by a Sn precipitation controlled compositionally step-graded method
Takeuchi, Shotaro; Shimura, Yosuke; Nakatsuka, Osamu; Zaima, Shigeaki; Ogawa, Masaki; Sakai, Akira (2008) -
Interface and defect control for group IV channel engineering
Sakai, Akira; Ohara, Yuji; Ueda, Takaya; Toyoda, Eiji; Izunome, Koji; Takeuchi, Shotaro; Shimura, Yosuke; Nakatsuka, Osamu; Ogawa, Masaki; Zaima, Shigeaki; Kimura, Shigeru (2008) -
Interface and defect control for group IV channel engineering
Sakai, Akira; Ohara, Yuji; Ueda, Takaya; Toyoda, Eiji; Izunome, Koji; Takeuchi, Shotaro; Shimura, Yosuke; Nakatsuka, Osamu; Ogawa, Masaki; Zaima, Shigeaki; Kimura, Shigeru (2008) -
Scanning tunneling microscopy observation of initial growth of Sn and Ge1-xSnx layers on Ge(001) substrates
Yamazaki, Masahiro; Takeuchi, Shotaro; Nakatsuka, Osamu; Sakai, Akira; Ogawa, Masaki; Zaima, Shigeaki (2008) -
Tensile strained Ge layers grown on compositionally step-graded Ge1-xSnx buffer layers
Shimura, Yosuke; Takeuchi, Shotaro; Sakai, Akira; Nakatsuka, Osamu; Ogawa, Masaki; Zaima, Shigeaki (2007) -
Tensile strained Ge layers on strain-relaxed Ge1-xSnx/virtual Ge substrates
Takeuchi, Shotaro; Sakai, Akira; Nakatsuka, Osamu; Ogawa, Masaki; Zaima, Shigeaki (2008)