Browsing by author "Fedler, F."
Now showing items 1-5 of 5
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AlGaN/GaN based MOSHFETs with different gate dielectrics and treatments
Mistele, D.; Rotter, T.; Bougrioua, Z.; Moerman, Ingrid; Röver, K.S.; Seyboth, M.; Schwegler, V.; Stemmer, J.; Fedler, F.; Klausing, H.; Semchinova, O.K.; Aderhold, J.; Graul, J. (2002) -
AlGaN/GaN-based MOSHFETs with different gate dielectrics and treatments
Mistele, D.; Rotter, T.; Röver, K. S.; Paprotta, S.; Bougrioua, Zahia; Fedler, F.; Klausing, H.; Semchinova, O. K.; Stemmer, J.; Aderhold, J.; Graul, J. (2001) -
Heterostructure field effect transistor types with novel gate dielectrics
Mistele, D.; Rotter, T.; Bougrioua, Zahia; Röver, K. S.; Fedler, F.; Klausing, H.; Stemmer, J.; Semchinova, O. K.; Aderhold, J.; Graul, J. (2001) -
Influence of process technology on DC-performance of GaN-based HFETs
Mistele, D.; Rotter, T.; Bougrioua, Z.; Marso, M.; Roll, H.; Klausing, H.; Fedler, F.; Semchinova, O.; Moerman, Ingrid; Graul, J. (2002) -
Influence of surface treatments on DC-performance of GaN-based HFETs
Mistele, D.; Rotter, T.; Bougrioua, Z.; Marso, M.; Roll, H.; Klausing, H.; Fedler, F.; Semchinova, O.K.; Aderhold, J.; Moerman, Ingrid; Graul, J. (2002)